The 2N5302 pinout belongs to a high-power NPN transistor designed for demanding applications such as audio amplifiers, motor control circuits, and power switching systems. With its rugged TO-3 metal case package, this transistor provides excellent heat dissipation and supports high current handling up to 30A with a maximum collector-emitter voltage of 60V and total power […]
The 2N5301 transistor is a high-power NPN silicon transistor designed for switching and amplifier applications requiring high current capacity and robust power handling. The 2N5301 pinout defines the lead arrangement of this high-performance NPN silicon transistor housed in a TO-3 metal case, it can deliver up to 30A collector current and 200W total power dissipation, […]
The 2N5401 pinout follows the Emitter–Base–Collector (E–B–C) configuration in a TO-92 plastic package. This 2N5401 PNP transistor is a high-voltage, low-current device capable of handling up to -150V collector-emitter and -160V collector-base voltage, making it perfect for audio amplifiers, voltage control, and signal switching applications. Due to its excellent reliability and low noise performance, it […]
The 2N5400 pinout follows the Emitter–Base–Collector (E–B–C) configuration in a TO-92 package, which is commonly used in low-power and high-voltage circuit designs. The 2N5400 PNP transistor is designed for high-voltage, low-current applications, capable of withstanding collector-emitter voltages up to -120V and collector-base voltages up to -130V. It is a popular choice in audio amplifiers, switching […]
The 2N5551 pinout follows the Emitter–Base–Collector (E–B–C) configuration in a TO-92 package, making it easy to identify during circuit assembly. The 2N5551 NPN transistor is a high-voltage, low-noise silicon BJT designed for signal amplification, switching, and driver circuits. With a collector-emitter voltage of 160V and collector-base voltage of 180V, it is ideal for audio amplifiers, […]
The 2N5550 pinout follows the Emitter–Base–Collector (E–B–C) sequence in the TO-92 package, making it easy to identify and integrate into various circuits. The 2N5550 NPN transistor is a high-voltage, low-current silicon device designed for signal amplification, voltage regulation, and switching applications. With a collector-emitter voltage of 140 V and collector-base voltage of 160 V, it […]
The 2N4410 pinout follows the Emitter–Base–Collector (E–B–C) sequence in the TO-92 plastic package. The 2N4410 NPN transistor is a general-purpose low-noise silicon device designed for high-voltage, low-current applications such as amplifiers, switching circuits, and signal processing. With a collector-emitter voltage of 80V, collector-base voltage of 120V, and a maximum current of 200mA, this transistor ensures […]
The 2N4923 pinout follows the Emitter–Collector–Base (E–C–B) configuration in the TO-126 package. The 2N4923 transistor is an NPN silicon power transistor designed for medium-power switching and amplification applications. With a collector-emitter voltage of 80V, collector-base voltage of 80V, and collector current of 1A, it delivers stable and efficient performance across various electronic circuits. This transistor […]
The 2N4922 pinout refers to its Emitter–Collector–Base (E–C–B) configuration, typical for TO-126 package NPN power transistors. The 2N4922 transistor is designed for medium-power switching and amplifier circuits, offering a collector-emitter voltage of 60V, collector-base voltage of 60V, and a collector current capacity of 1 ampere. With a maximum power dissipation of 30 watts, it is […]
The 2N4921 pinout and electrical performance make it a reliable medium-power NPN transistor ideal for switching and amplification tasks. With its TO-126 package, 40V voltage rating, and 1A current handling, it fits well in circuits requiring moderate gain and efficient heat dissipation. Its compact design and stable characteristics make it a common choice for driver […]
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