2N3866 Pinout, Equivalent, Application, Datasheet

The 2N3866 pinout describes a high-frequency NPN silicon transistor designed for RF and VHF amplifier applications. Built in a metal TO-39 package with a standard E–B–C pin configuration, it delivers excellent gain, efficiency, and power output in RF circuits.

Commonly used in radio transmitters, VHF amplifiers, and RF driver stages, the 2N3866 offers stable performance up to hundreds of megahertz, making it ideal for communication and instrumentation systems.

Introduction to 2N3866 NPN Transistor

The 2N3866 pinout describes a high-frequency NPN silicon transistor designed for RF and VHF amplifier applications. Built in a metal TO-39 package with a standard E–B–C pin configuration, it delivers excellent gain, efficiency, and power output in RF circuits.

Commonly used in radio transmitters, VHF amplifiers, and RF driver stages, the 2N3866 offers stable performance up to hundreds of megahertz, making it ideal for communication and instrumentation systems.

2N3866 NPN Transistor

Pinout of 2N3866

Pin Configuration of 2N3866 Pinout

Understanding the 2N3866 Pinout Configuration

The 2N3866 pinout follows the Emitter–Base–Collector (E–B–C) configuration when viewed from the bottom of the TO-39 metal can package. Correct pin identification ensures proper biasing and stable RF operation.

Key Features of 2N3866 Transistor

• Designed for RF and VHF frequency amplification
• High power gain and low noise performance
• Excellent linearity in RF output stages
• Suitable for signal amplification up to 175 MHz and beyond
• Reliable TO-39 metal package for heat dissipation
• Compatible for RF driver and output amplifier stages

2N3866 Transistor Datasheet and Specifications

• Collector-Emitter Voltage (Vce): 30V
• Collector-Base Voltage (Vcb): 55V
• Emitter-Base Voltage (Veb): 5V
• Collector Current (Ic): 400mA
• Total Power Dissipation (Ptot): 3.5W
• DC Current Gain (hFE): 20 – 100 (typical)
• Transition Frequency (fT): 500 MHz (typical)
• Output Power (Po): Up to 500 mW at 175 MHz
• Polarity Type: NPN
• Package Type: TO-39 (Metal Can)
• Pin Configuration: Emitter–Base–Collector (E–B–C)
• Junction Temperature (Tj max): 200°C
• Storage Temperature Range: –65°C to +200°C

Working Principle of 2N3866 Transistor

The 2N3866 NPN transistor functions as a high-frequency current amplifier. When a small signal is applied at the base, it modulates the current between collector and emitter, resulting in an amplified RF output. Its low internal capacitance and fast response allow it to operate efficiently at VHF and UHF frequencies, ensuring low signal distortion and high linear gain.

This makes it suitable for transmitter output stages, signal boosters, and RF driver chains in communication systems.

More Circuit Layouts

Applications of 2N3866 Transistor

• VHF and RF power amplifiers
• Signal boosters and transmitter output stages
• RF oscillators and driver circuits
• Two-way radio communication systems
• Antenna amplifiers and RF front-end stages
• Test and measurement instrumentation

Equivalent and Alternative Transistors

The 2N3866 can be replaced with the following transistors having similar parameters (verify pin configuration before use):

• MRF476
• 2N4427
• 2N5109
• BLY87
• 2SC1970
• BFY90

These equivalents are suitable for similar RF and VHF frequency applications.

Frequently Asked Questions (FAQ)

What type of transistor is 2N3866?

It is an NPN RF power transistor designed for high-frequency amplification.

What is the 2N3866 pin configuration?

The pin sequence is Emitter–Base–Collector (E–B–C) in the TO-39 package.

What is the maximum collector current of 2N3866?

It can handle a collector current up to 400 mA.

What is the transition frequency of 2N3866?

The transistor offers an fT of approximately 500 MHz.

Is 2N3866 suitable for RF amplifiers?

Yes, it is commonly used in RF, VHF, and low-UHF amplifiers for communication systems.

Conclusion

The 2N3866 NPN transistor is a high-performance RF amplifier transistor ideal for radio transmitters, VHF amplifiers, and signal boosters. Its excellent linearity, high power dissipation, and metal-can design ensure superior reliability in demanding RF environments.

With proven stability and strong gain characteristics, the 2N3866 remains a trusted choice for engineers in RF and analog circuit design.

Datasheet & Pinout of 2N3866 NPN Transistor

Click the following Button to download the datasheet of 2N3866 Transistor :

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