The 2N3563 pinout describes a high-frequency NPN silicon transistor specially designed for RF and IF amplifier or oscillator circuits. It offers low noise, stable gain, and high reliability, making it ideal for radio frequency receivers, signal boosters, and oscillator stages in VHF communication systems. Encased in the compact TO-106 package, the 2N3563 transistor is perfect […]
The 2N3553 pinout describes a high-frequency NPN silicon transistor designed for RF power amplification and signal transmission. It is widely used in VHF transmitters, RF oscillators, and communication equipment due to its ability to deliver excellent power gain at high frequencies. Housed in a durable TO-39 metal can package, the 2N3553 provides high reliability, low […]
The 2N5550 pinout follows the Emitter–Base–Collector (E–B–C) sequence in the TO-92 package, making it easy to identify and integrate into various circuits. The 2N5550 NPN transistor is a high-voltage, low-current silicon device designed for signal amplification, voltage regulation, and switching applications. With a collector-emitter voltage of 140 V and collector-base voltage of 160 V, it […]
The 2N4410 pinout follows the Emitter–Base–Collector (E–B–C) sequence in the TO-92 plastic package. The 2N4410 NPN transistor is a general-purpose low-noise silicon device designed for high-voltage, low-current applications such as amplifiers, switching circuits, and signal processing. With a collector-emitter voltage of 80V, collector-base voltage of 120V, and a maximum current of 200mA, this transistor ensures […]
The 2N4923 pinout follows the Emitter–Collector–Base (E–C–B) configuration in the TO-126 package. The 2N4923 transistor is an NPN silicon power transistor designed for medium-power switching and amplification applications. With a collector-emitter voltage of 80V, collector-base voltage of 80V, and collector current of 1A, it delivers stable and efficient performance across various electronic circuits. This transistor […]
The 2N4918 pinout follows the standard Emitter–Collector–Base (E–C–B) configuration in a TO-126 package, depending on manufacturer variation. The 2N4918 PNP transistor is a medium-power silicon transistor designed for audio amplifier stages, low-frequency drivers, and general-purpose switching circuits. With a collector-emitter voltage of -40V, collector-base voltage of -40V, and a maximum collector current of 1A, the […]
The 2N5089 NPN transistor is one of the most popular low-noise, high-gain small-signal transistors designed for audio frequency and instrumentation applications. The 2N5089 pinout follows the Emitter–Base–Collector (E–B–C) configuration in a TO-92 package when viewed from the flat face.It is highly regarded for its exceptionally high DC current gain, low input noise, and linear amplification, […]
The 2N5088 pinout follows the Emitter–Base–Collector (E–B–C) order when viewed from the flat face of its TO-92 package. The 2N5088 NPN transistor is a low-noise, high-gain small-signal device widely used in audio amplifiers, instrumentation, and sensor signal preamplifiers.It delivers excellent linearity and low distortion, making it ideal for microphone preamps, guitar pedals, and hi-fi audio […]
The 2N5087 pinout follows the Emitter–Base–Collector (E–B–C) sequence when the flat side of its TO-92 package faces you.The 2N5087 PNP transistor is a low-noise, high-gain small-signal amplifier device designed for audio preamplifiers, tone-control stages, and signal conditioning circuits.It can handle up to –100 mA collector current and –50 V collector-emitter voltage, providing reliable performance for […]
The 2N5086 pinout follows the Emitter–Base–Collector (E–B–C) configuration when the flat side of its TO-92 package is facing forward.The 2N5086 PNP transistor is a high-gain, low-noise small-signal device designed for audio, RF, and general-purpose amplifier circuits.It supports up to –100 mA collector current and –50 V collector-emitter voltage, making it ideal for precision low-current amplification, […]
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