BD536 PNP Transistor Pinout Datasheet

Introduction

The BD536 is a silicon epitaxial-base PNP power transistor designed for medium-power linear and switching applications. It is the PNP complementary device to the BD535 NPN transistor, forming an ideal pair for push-pull and class-AB audio amplifier stages. The BD536 offers reliable performance in circuits that require strong current handling, good gain stability, and consistent thermal behavior under load.

In amplifier circuits, the BD536 is commonly used as the negative polarity output device, complementing its NPN partner for symmetrical waveform reproduction. Its moderate voltage rating, high current capacity, and low saturation voltage make it suitable for driver circuits, output amplifiers, and regulated power stages. The transistor’s epitaxial-base structure ensures efficient switching and good linear response, balancing both speed and thermal dissipation.

BD536 PNP Transistor

The BD536 performs well in consumer audio amplifiers, control systems, and medium-power switching circuits. Its stable gain and wide operating temperature range ensure dependable operation in both industrial and hobby electronics, where durability and complementary pairing with BD535 are essential for balanced circuit design.

Pinout of BD536

Key Features

• Medium-power PNP silicon transistor
• Low collector-emitter saturation voltage
• High current capability with strong thermal performance
• Reliable complementary match with BD535
• Suitable for both switching and linear amplifier applications
• Good DC current gain and stability
• TO-220 plastic power package for efficient heat dissipation

Specifications/Characteristics

• Collector-Base Breakdown Voltage (VCBO) = –60 V
• Collector-Emitter Breakdown Voltage (VCEO) = –60 V
• Collector-Emitter Sustaining Voltage (VCES) = –60 V (IB = 0)
• Emitter-Base Breakdown Voltage (VEBO) = –5 V
• Continuous Collector Current (IC) = –8 A
• Total Power Dissipation (Ptot) at TC = 25 °C = 50 W
• Maximum Junction Temperature (TJ) = 150 °C
• Storage Temperature Range (Tstg) = –65 °C to +150 °C
• DC Current Gain (hFE) = 40 (typical at rated test condition)
• Collector-Emitter Saturation Voltage (VCE(sat)) = –0.8 V (IC = –2 A, IB = –0.2 A)
• Transition Frequency (fT) = 3 MHz

Pin Configuration

Comparison BD536 (PNP) vs BD535 (NPN Complementary)

• The BD536 is a PNP transistor, while BD535 is its NPN complement. Both share the same voltage, current, and power ratings, allowing them to operate together in complementary amplifier and switching stages.
• The BD536 handles the negative half of the waveform, and BD535 manages the positive half, resulting in balanced performance and low distortion in push-pull amplifier configurations.
• Together, they provide symmetrical current handling, equal thermal response, and reliable operation in linear and switching circuits, making them a robust matched pair for medium-power applications.

More Circuit Layouts

Key Applications of BD536 PNP Transistor

• Audio amplifier output and driver stages
• Complementary push-pull configurations
• Power control and voltage regulator circuits
• Switching regulators and converter circuits
• Industrial and consumer power amplifier designs
• Medium-power linear amplification circuits

NPN Complimentary Transistor

• The NPN complementary transistor for BD536 is BD535.

Equivalent Transistors of BD536 PNP Transistor

• Possible equivalents or substitutes for BD536 include BD534 and BD538 (other variants in the same transistor series).
• Depending on application and polarity needs, devices like TIP42 series or 2N6491 can also be used if electrical limits match or exceed the BD536 ratings.

Datasheet of BD536 PNP Transistor

Click the following Button to download the datasheet of BD536 Transistor :

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