The 2N5302 pinout belongs to a high-power NPN transistor designed for demanding applications such as audio amplifiers, motor control circuits, and power switching systems. With its rugged TO-3 metal case package, this transistor provides excellent heat dissipation and supports high current handling up to 30A with a maximum collector-emitter voltage of 60V and total power […]
The 2N5301 transistor is a high-power NPN silicon transistor designed for switching and amplifier applications requiring high current capacity and robust power handling. The 2N5301 pinout defines the lead arrangement of this high-performance NPN silicon transistor housed in a TO-3 metal case, it can deliver up to 30A collector current and 200W total power dissipation, […]
The 2N5551 pinout follows the Emitter–Base–Collector (E–B–C) configuration in a TO-92 package, making it easy to identify during circuit assembly. The 2N5551 NPN transistor is a high-voltage, low-noise silicon BJT designed for signal amplification, switching, and driver circuits. With a collector-emitter voltage of 160V and collector-base voltage of 180V, it is ideal for audio amplifiers, […]
The 2N5087 pinout follows the Emitter–Base–Collector (E–B–C) sequence when the flat side of its TO-92 package faces you.The 2N5087 PNP transistor is a low-noise, high-gain small-signal amplifier device designed for audio preamplifiers, tone-control stages, and signal conditioning circuits.It can handle up to –100 mA collector current and –50 V collector-emitter voltage, providing reliable performance for […]
The 2N5086 pinout follows the Emitter–Base–Collector (E–B–C) configuration when the flat side of its TO-92 package is facing forward.The 2N5086 PNP transistor is a high-gain, low-noise small-signal device designed for audio, RF, and general-purpose amplifier circuits.It supports up to –100 mA collector current and –50 V collector-emitter voltage, making it ideal for precision low-current amplification, […]
The 2N4403 pinout follows the Emitter–Base–Collector (E–B–C) sequence when viewed from the flat side of the TO-92 plastic package.The 2N4403 PNP transistor is a reliable low-power amplification and switching device, capable of handling up to –600 mA of collector current at –40 V. Designed for audio amplifier stages, signal processing, and general-purpose switching, the 2N4403 […]
The 2N4402 pinout follows the Emitter–Base–Collector (E–B–C) sequence when viewed from the flat side of the TO-92 plastic package. This 2N4402 PNP transistor is designed for low to medium current switching and signal amplification applications. With a collector–emitter voltage (Vce) of –40 V, collector–base voltage (Vcb) of –40 V, and a collector current of –600 […]
The 2N4400 pinout follows the Emitter–Base–Collector (E–B–C) sequence and belongs to the NPN silicon transistor family designed for low to medium current applications. With a collector–emitter voltage (Vce) of 40V, collector–base voltage (Vcb) of 60V, and collector current of 600mA, the 2N4400 transistor delivers stable switching and amplification performance in audio preamplifiers, driver circuits, and […]
The 2N4126 pinout follows the Emitter–Base–Collector (E–B–C) sequence, and it is a PNP silicon transistor designed for low-power amplification and signal switching in general electronic circuits. With a collector–emitter voltage (Vce) of 25V, collector–base voltage (Vcb) of 25V, collector current (Ic) up to 200mA, and power dissipation of 650mW, the 2N4126 transistor is widely used […]
The 2N4125 pinout follows the Emitter–Base–Collector (E–B–C) sequence and is widely used as a low-power PNP transistor in signal amplification, switching, and complementary circuit designs. It operates with a collector–emitter voltage (Vce) of 30V, a collector–base voltage (Vcb) of 30V, a maximum collector current of 200mA, and a power dissipation of 650mW. The 2N4125 transistor […]
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