The IRFP360 is a high-power N-Channel MOSFET designed for high-voltage and high-current switching applications. This article explains the IRFP360 pinout, features, specifications, working principle, applications, and alternatives in the same 9-heading format.
Introduction
The IRFP360 is an enhancement-mode N-Channel power MOSFET optimized for demanding power electronics applications. It is widely used in high-voltage switching circuits where reliability, thermal stability, and efficient current handling are required. Its robust design makes it suitable for both industrial and audio power systems.
Pin Configuration / Pinout of IRFP360 MOSFET
Understanding the IRFP360 Pinout Configuration
The IRFP360 is packaged in a TO-220 enclosure with a standard G-D-S pin arrangement:
| Pin# | Pin Name |
|---|---|
| 1 | Gate |
| 2 | Drain |
| 3 | Source |
Correct identification of the IRFP360 pinout is essential for safe and reliable circuit operation.
Note: DATASHEET DOWNLOAD button is provided end of this article.
IRFP360 Key Features
- N-Channel enhancement-mode MOSFET
- Designed for high-voltage switching applications
- Capable of handling high continuous and pulsed currents
- Rugged structure for reliable long-term operation
- Suitable for linear and switching power circuits
- TO-220 package for effective heat sinking
IRFP360 Specifications / Characteristics
- Drain-Source Voltage (VDS): 400V
- Gate-Source Voltage (VGS): ±20V
- Continuous Drain Current (ID): 23A
- Pulsed Drain Current (IDM): 92A
- Power Dissipation (PD): 250W
- Junction Temperature (Tj): 150 °C
- Storage Temperature Range (Tstg): −55 °C to +150 °C
- Package Type: TO-220
- Pin Configuration: Gate – Drain – Source
Key Applications of IRFP360 MOSFET
- High-voltage switch-mode power supplies
- Power inverters and converters
- Industrial motor drive circuits
- Audio power amplifiers
- High-energy power switching systems
IRFP360 Equivalent / Alternatives
(Verify pin compatibility before using substitutions)
Equivalent MOSFETs: IRFP350, IRFP460
Alternative MOSFETs: IRFP250, IRFP450, FQA24N50
More Circuit Layouts
Working Principle of IRFP360
The IRFP360 operates by applying a positive voltage to the gate relative to the source. When this voltage exceeds the threshold level, a conductive channel forms between drain and source, allowing current to flow. Removing or reducing the gate voltage turns the MOSFET OFF, enabling efficient high-voltage power control.
Frequently Asked Questions (FAQ)
Q1: Is IRFP360 a logic-level MOSFET?
No, it requires a standard gate drive voltage higher than logic-level signals.
Q2: Does IRFP360 need a heat sink?
Yes, proper heat sinking is required for high-power operation.
Q3: Can IRFP360 be used in SMPS designs?
Yes, it is well suited for high-voltage SMPS and inverter circuits.
Q4: What package does IRFP360 use?
It is available in a TO-220 power package.
Conclusion
The IRFP360 N-Channel MOSFET is a reliable choice for high-voltage and high-power applications. With strong electrical ratings, efficient switching behavior, and a standard TO-220 package, it is well suited for demanding power electronics designs.
Datasheet of IRFP360 MOSFET
Click the following Button below to download the datasheet of IRFP360 :
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