The IRFP350 is a high-voltage N-Channel power MOSFET designed for efficient power switching and control applications. This guide explains the IRFP350 pinout, key features, specifications, working principle, applications, and suitable alternatives in a clear 9-heading format.

Introduction
The IRFP350 is an enhancement-mode N-Channel MOSFET optimized for medium-to-high voltage power electronics. With its strong power dissipation capability and stable thermal performance, it is widely used in industrial power supplies, inverters, and high-voltage switching circuits where reliability and efficiency are essential.

Pin Configuration / Pinout of IRFP350 MOSFET

Understanding the IRFP350 Pinout Configuration
The IRFP350 comes in a TO-220 package with a standard G-D-S pin configuration:
| Pin# | Pin Name |
|---|---|
| 1 | Gate |
| 2 | Drain |
| 3 | Source |
Correct identification of the IRFP350 pinout ensures safe installation and optimal circuit performance.
Note: DATASHEET DOWNLOAD button is provided end of this article.
IRFP350 Key Features
- N-Channel enhancement-mode MOSFET
- High drain-source voltage capability
- Suitable for high-power switching applications
- Robust thermal and electrical stability
- Designed for industrial and power electronics use
- TO-220 package for effective heat sinking
IRFP350 Specifications / Characteristics
- Drain-Source Voltage (VDS): 400V
- Gate-Source Voltage (VGS): ±20V
- Continuous Drain Current (ID): 16A
- Pulsed Drain Current (IDM): 64A
- Power Dissipation (PD): 180W
- Junction Temperature (Tj): 150 °C
- Storage Temperature Range (Tstg): −55 °C to +150 °C
- Package Type: TO-220
- Pin Configuration: Gate – Drain – Source
Key Applications of IRFP350 MOSFET
- Switch-mode power supplies (SMPS)
- High-voltage DC switching
- DC-AC inverters
- Industrial power control circuits
- Motor drive and control systems
IRFP350 Equivalent / Alternatives
(Verify pin compatibility before using substitutions)
Equivalent MOSFETs: IRFP360, IRFP450
Alternative MOSFETs: IRF840, IRFP250, IRFP460
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Working Principle of IRFP350
The IRFP350 operates by applying a positive voltage to the gate relative to the source. When this voltage exceeds the threshold level, a conductive channel forms between the drain and source, allowing current to flow. Reducing or removing the gate voltage switches the MOSFET OFF, enabling precise control of high-voltage power circuits.
Frequently Asked Questions (FAQ)
Q1: What type of MOSFET is IRFP350?
It is an N-Channel enhancement-mode power MOSFET.
Q2: Is IRFP350 suitable for high-voltage applications?
Yes, it is designed for applications requiring high drain-source voltage handling.
Q3: Does IRFP350 need a heat sink?
Yes, a heat sink is recommended for continuous high-power operation.
Q4: Can IRFP350 be used in SMPS circuits?
Yes, it is commonly used in SMPS and inverter designs.
Conclusion
The IRFP350 N-Channel MOSFET is a dependable choice for high-voltage and high-power electronic applications. With its strong electrical ratings, standard TO-220 package, and efficient switching performance, it is well-suited for industrial, inverter, and power supply designs.
Datasheet of IRFP350 MOSFET
Click the following Button below to download the datasheet of IRFP350 :
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