BD234 PNP Transistor Pinout Datasheet

Introduction

The BD234 is a silicon PNP epitaxial-base power transistor intended for medium power linear amplification and switching applications. It is packaged in the JEDEC SOT-32 (TO-126) plastic package, which provides a balance between compact dimensions and thermal dissipation for low to moderate power levels.

Because it is a PNP transistor, BD234 is used in circuits where current flows from emitter to collector (i.e. for negative-going or “high-side” switching in some configurations). Its design makes it suitable to complement NPN devices in push-pull or complementary amplifier circuits.

BD234 PNP Transistor

In practice, BD234 finds use in medium-power audio amplifier circuits, driver stages, and switching tasks in analog electronics. Its robustness, moderate gain, and voltage ratings make it acceptable for general-purpose designs in hobbyist and industrial electronics.

Pinout of BD234

Key Features

• PNP polarity for complementary circuit use
• Good gain stability in the medium-power class
• Low saturation voltage for efficient conduction
• Package suitable for moderate thermal conditions
• Compatible with push-pull amplifier designs
• Reliable for linear as well as switching roles

Specifications/Characteristics

• Collector-Base Breakdown Voltage, VCBO = -45 V
• Collector-Emitter Breakdown Voltage, VCEO = -45 V
• Collector-Emitter Voltage with base open (sustaining), VCE(sus) = -45 V
• Emitter-Base Breakdown Voltage, VEBO = -5 V
• Collector Current, Continuous IC = -2 A
• Collector Peak (Pulse) Current, ICM = -6 A
• Total Power Dissipation, Ptot = 25 W (at TC = 25 °C)
• Maximum Junction Temperature, Tj = 150 °C
• Storage Temperature Range, Tstg = –65 to +150 °C
• Thermal Resistance, Junction-to-Case, θJC = 5 °C/W
• Collector Cut-Off Current, ICBO ≤ 0.1 mA at VCB = -45 V
• Emitter Cut-Off Current, IEBO ≤ 1.0 mA at VEB = -5 V
• DC Current Gain (hFE) = 40 (IC = -150 mA, VCE = -2 V)
• DC Current Gain (hFE) = 25 (IC = -1 A, VCE = -2 V)
• Collector-Emitter Saturation Voltage, VCE(sat) = -0.6 V (IC = -1 A, IB = -0.1 A)
• Base-Emitter On Voltage, VBE(on) = -1.3 V (IC = -1 A, VCE = -2 V)
• Transition Frequency, fT = 3 MHz (IC = -250 mA, VCE = -10 V)

Pin Configuration

Comparison Summary of BD234 vs BD236 vs BD238

• BD234 is the lowest-voltage PNP transistor in the series, rated for about 45 V collector-emitter breakdown, making it ideal for low to medium-voltage amplifier and switching applications.
• BD236 offers a moderate voltage rating of 60 V, providing extra headroom for circuits operating on slightly higher supply voltages while keeping the same current and power ratings.
• BD238 is the highest-voltage variant, rated up to 80 V collector-emitter, suitable for higher-voltage and more demanding applications that require greater safety margins.
• All three share the same 2 A continuous current, 6 A peak current, and 25 W power dissipation, differing mainly in their voltage handling capability while maintaining similar gain and frequency response.

More Circuit Layouts

Key Applications of BD234 PNP Transistor

• Push-pull complementary amplifier circuits
• Audio driver and amplifier stages
• Switch-mode or analog switching circuits
• High side or “top” section switching in PNP configurations
• General-purpose medium-power PNP roles in electronics

NPN Complimentary Transistor

• The complementary NPN transistor for BD234 is BD233.

Equivalent Transistors of BD234 PNP Transistor

Some alternatives or equivalents to BD234 are:

• BD236 (for higher voltage rating)
• BD238 (for still higher voltage class)
• PNP general-purpose power transistors with similar voltage/current ratings
• Other plastic-package PNP devices in the 2 A / 25 W class

(Pin configuration of some transistors mentioned here may different from BD234).

Datasheet of BD234 PNP Transistor

Click the following Button below to download the datasheet of BD234 Transistor :

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