2SC2625 NPN Transistor Pinout Datasheet

Introduction

The 2SC2625 is a high-power NPN silicon transistor designed primarily for high-speed switching and power amplifier applications. Manufactured by Toshiba, this transistor is widely used in switch mode power supplies (SMPS), audio amplifiers, and power inverters due to its excellent switching characteristics and high current-handling capacity. It is built in a TO-3P package, which offers efficient heat dissipation and allows it to handle high collector currents with minimal thermal stress.

The 2SC2625 transistor delivers high performance in high-voltage and high-frequency circuits, making it ideal for applications where fast switching and efficiency are critical. Its structure allows for a high collector-emitter voltage and a large collector current rating, ensuring reliability under heavy load conditions. Moreover, this transistor is highly favored in TV horizontal output stages, monitor circuits, and DC-AC converters, thanks to its strong durability and consistent performance.

2SC2625 NPN Transistor

Due to its low saturation voltage and high gain bandwidth, the 2SC2625 ensures low power loss during operation. This feature enhances overall circuit efficiency and makes it suitable for modern energy-efficient designs. Additionally, the transistor’s complementary PNP counterpart allows it to be used in push-pull amplifier configurations, improving power delivery and reducing distortion in audio or signal processing systems.

Pinout of 2SC2625

Key Features

• High power and voltage handling capability
• Fast switching response suitable for SMPS and inverter circuits
• Low collector-emitter saturation voltage for improved efficiency
• Excellent current gain linearity
• Reliable thermal stability and rugged construction
• Suitable for audio frequency and horizontal deflection output stages
• Compatible with various NPN power transistor applications

Specifications/Characteristics

• Collector-Base Breakdown Voltage, VCBO = 450 V (ICBO = 1 mA)
• Collector-Emitter Breakdown Voltage, V(BR)CEO = 400 V (ICEO = 10 mA, IB = 0)
• Collector-Emitter Sustaining Voltage, VCEO(sus) = 400 V (IC = 1 A, IB = 0)
• Emitter-Base Breakdown Voltage, VEBO = 7 V (IEBO = 0.1 mA)
• Collector Current, Continuous IC = 10 A (absolute maximum)
• Base Current, Absolute Maximum IB = 3 A
• Collector Power Dissipation, PD = 80 W (TO-3P / TO-3PN / TO-3PB); PD = 78 W (TO-247 / TO-247S) (TC = 25 °C)
• Operating Junction Temperature, Tj = +150 °C
• Storage Temperature Range, Tstg = −40 to +150 °C
• Junction-to-Case Thermal Resistance, θj-c = 1.55 °C/W (TO-3P / TO-3PN / TO-3PB); θj-c = 1.6 °C/W (TO-247 / TO-247S)
• Collector-Emitter Saturation Voltage, VCE(sat) = 1.2 V (IC = 4 A, IB = 0.8 A)
• Base-Emitter Saturation Voltage, VBE(sat) ≈ 1.5 V (typical, under saturation conditions)
• Collector Cut-off Current, ICBO = 1.0 mA (VCBO = 450 V)
• Emitter Cut-off Current, IEBO = 0.1 mA (VEBO = 7 V)
• DC Current Gain, hFE (min) = 10 (IC = 4 A, VCE = 5 V)
• Switching times (typical, per datasheet test conditions): tON ≈ 1.0 µs, tF ≈ 1.0 µs, tSTG ≈ 2.0 µs
• Package options called out in datasheets: TO-3P, TO-3PN, TO-3PB, TO-247, TO-247S (pin assignment B, C, E)

Pin Configuration

More Circuit Layouts

Key Applications of 2SC2625 NPN Transistor

• Switch Mode Power Supplies (SMPS)
• Audio Power Amplifiers
• DC-AC Inverters
• Horizontal Output Stages in CRT Monitors and TVs
• High-Speed Switching Circuits
• Power Conversion Systems

PNP Complimentary Transistor

• The PNP complementary transistor for the 2SC2625 is the 2SA1075.

Equivalent Transistors of 2SC2625 NPN Transistor

• 2SC3858
• 2SC3997
• 2SC3998
• MJW18020
• BUV48A

(Pin configuration of some transistors mentioned here may different from 2SC2625).

Datasheet of 2SC2625 NPN Transistor

Click the following Button below to download the datasheet of 2SC2625 Transistor :

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