2N5679 Pinout, Equivalent, Application, Datasheet

The 2N5679 pinout defines a high-voltage PNP silicon transistor designed for RF, audio, and general-purpose power amplifier circuits. It comes in a TO-39 metal can package with the Emitter–Base–Collector (E–B–C) sequence. The 2N5679 delivers dependable performance in medium-power switching and signal amplification applications that demand stability and linearity.

This transistor is commonly found in audio driver stages, RF amplifiers, and regulator circuits, offering high voltage capability and robust power dissipation.

Introduction to 2N5679 PNP Transistor

The 2N5679 is a PNP silicon power transistor built for high-frequency and medium-power applications. It supports up to –100V collector-emitter voltage (Vce) and –100V collector-base voltage (Vcb), allowing a collector current (Ic) of 1A with a power dissipation of 10W.

Because of its low leakage, high voltage tolerance, and stable current gain, the 2N5679 is an excellent choice for analog amplifiers, signal drivers, and output stages where consistent performance and thermal reliability are required. Understanding the 2N5679 pinout ensures proper integration into circuit layouts and correct biasing.

2N5679 PNP Transistor

Pinout of 2N5679

Pin Configuration of 2N5679 Pinout

Understanding the 2N5679 Pinout Configuration

The 2N5679 pinout follows the Emitter–Base–Collector (E–B–C) order when viewed from the bottom of the TO-39 metal package. Each lead corresponds to a specific terminal crucial for transistor operation in analog and switching applications.

Key Features of 2N5679 Transistor

• PNP silicon transistor for power and signal amplification
• High voltage tolerance up to –100V
• High power dissipation capability (10W)
• Excellent gain and thermal stability
• Suitable for RF, audio, and linear amplifier circuits
• Metal TO-39 case for efficient heat dissipation and durability

2N5679 Transistor Datasheet and Specifications

• Collector-Emitter Voltage (Vce): –100V
• Collector-Base Voltage (Vcb): –100V
• Emitter-Base Voltage (Veb): –5V
• Collector Current (Ic): –1A
• Total Power Dissipation (Ptot): 10W
• DC Current Gain (hFE): 30 – 100 (typical)
• Transition Frequency (fT): 200 MHz (typical)
• Package Type: TO-39 (Metal Can)
• Pin Configuration: Emitter–Base–Collector (E–B–C)
• Polarity Type: PNP
• Junction Temperature (Tj max): 200°C
• Storage Temperature Range: –65°C to +200°C

Working Principle of 2N5679 Transistor

The 2N5679 PNP transistor operates as a current-controlled amplifier or switch. When a small current flows out of the base (opposite to NPN type), it enables a much larger current to flow from the emitter to collector.

Because of its low capacitance and high transition frequency, the 2N5679 is effective in RF and audio output stages, maintaining clean amplification and minimal distortion. Its metal case enhances heat transfer, extending its life in continuous power applications.

More Circuit Layouts

Applications of 2N5679 Transistor

• Audio output and driver amplifiers
• RF and VHF power amplifiers
• Analog signal amplifiers
• Power regulators and switching circuits
• Signal processing and instrumentation
• Communication and test equipment

Equivalent and Alternative Transistors

The 2N5679 PNP transistor can be replaced or substituted with:

• 2N4036
• 2N5415
• MJ2955
• BD140
• 2N2905A

(Always verify pinout configuration and power ratings before substitution.)

Frequently Asked Questions (FAQ)

What type of transistor is 2N5679?

It is a PNP silicon power transistor used for amplification and switching.

What is the 2N5679 pin configuration?

The pin sequence is Emitter–Base–Collector (E–B–C) when viewed from the bottom of the TO-39 package.

What is the maximum collector current of 2N5679?

It can handle up to 1A continuous collector current.

What is the total power dissipation of 2N5679?

The maximum power dissipation is 10W.

Where is 2N5679 used?

It is used in RF circuits, audio amplifiers, signal drivers, and power switching circuits.

Conclusion

The 2N5679 PNP transistor is a high-voltage, medium-power device ideal for RF, audio, and linear amplification. With its –100V capability, 10W power dissipation, and stable frequency response, it offers reliable performance in demanding analog and power circuits.

Its TO-39 metal can package ensures excellent heat dissipation, making it a dependable option for RF engineers and circuit designers who require durability and precision in signal amplification.

Datasheet & Pinout of 2N5679 PNP Transistor

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