2N5416 Pinout, Equivalent, Application, Datasheet

The 2N5416 is a high-voltage silicon PNP transistor designed for power amplification, industrial control, and voltage regulation circuits. It offers an exceptionally high collector-emitter voltage (Vce) of –300 V and a collector-base voltage (Vcb) of –350 V, which makes it one of the most robust transistors in the TO-39 family. The 2N5416 pinout follows the Emitter–Base-Collector (E–B-C) sequence, offering engineers a familiar and reliable configuration for designing high-voltage PNP switching and amplifier stages.

Built in a TO-39 metal can package, the 2N5416 ensures strong thermal dissipation and structural durability. With a collector current (Ic) of –1 A and power dissipation of 10 W, this transistor is capable of driving demanding loads and handling higher operating voltages without performance degradation.

2n5416 datasheet pinout
2N5416 Transistor Datasheet and Specs

Introduction to 2N5416 PNP Transistor

The 2N5416 PNP transistor is specifically engineered for high-voltage, medium-current applications, where stability and durability are essential. It serves as a superior choice for linear amplifiers, voltage regulators, and driver circuits, particularly in industrial and audio applications.

Because of its high voltage rating of –300 V, this transistor operates reliably in circuits exposed to electrical surges or variable input conditions. Its metal TO-39 body enhances thermal conductivity, allowing efficient heat transfer, while its internal silicon structure ensures low leakage currents and stable DC gain across varying loads.



2N5416 PNP Transistor

2N5416 transistor pin configuration diagram pinout
2N5416 Transistor Pin Configuration Diagram Pinout

Pinout of 2N5416

2N5416 transistor pin configuration pinout diagram
2N5416 Transistor Pin Configuration Pinout Diagram




Pin Configuration of 2N5416 Pinout

Pin#Pin Name
1Emitter
2Base
3Collector
2N5416 Pin Configuration



Key Features of 2N5416 Transistor

  • High-voltage PNP silicon transistor
  • Robust TO-39 metal package for effective heat dissipation
  • Collector-emitter voltage up to –300 V
  • Stable DC current gain and linear operation
  • Excellent thermal and electrical reliability
  • Suitable for amplifiers, regulators, and switching devices

2N5416 Transistor Datasheet and Specifications

  • Transistor Type: PNP Silicon
  • Collector-Emitter Voltage (Vce): –300 V
  • Collector-Base Voltage (Vcb): –350 V
  • Emitter-Base Voltage (Veb): –5 V (typical)
  • Collector Current (Ic): –1 A
  • Power Dissipation (Ptot): 10 W
  • DC Current Gain (hFE): 20 – 100
  • Transition Frequency (fT): 50 MHz (typical)
  • Operating Junction Temperature (Tj): –65 °C to +200 °C
  • Package Type: TO-39 Metal Can
  • Pin Configuration: Base – Collector – Emitter (B–C–E)



Equivalent and Alternative Transistors

The 2N5416 transistor has several functional equivalents and substitutes that can be used depending on circuit requirements:

  • 2N5415 – PNP, TO-39, –200 V, –1 A
  • MJE350 – PNP, TO-126, –300 V, –0.5 A
  • BD140 – PNP, TO-126, –80 V, –1.5 A
  • 2N4037 – PNP, TO-39, –150 V, –800 mA
  • 2N4036 – PNP, TO-39, –120 V, –500 mA

When selecting a replacement, ensure that the voltage and current ratings match or exceed your circuit’s requirements.

More Circuit Layouts




Applications of 2N5416 Transistor

The 2N5416 transistor is widely used in high-voltage and precision electronic circuits. Typical uses include:

  • Audio power amplifiers
  • High-voltage driver circuits
  • Linear and voltage regulator stages
  • Industrial control and automation systems
  • Signal processing and analog amplifiers
  • Switching circuits in test and measurement equipment

Its combination of high voltage tolerance and reliable thermal stability makes it a top performer in audio, instrumentation, and high-power signal control systems.

Working Principle of 2N5416 Transistor

The 2N5416 PNP transistor operates by allowing current flow from emitter to collector when a small reverse bias is applied between the base and emitter terminals. The transistor turns ON when the base is at a lower potential than the emitter, enabling high current transfer with minimal loss.

In amplifier configurations, it functions in the active region to boost input signals with high fidelity. In switching applications, it operates in cut-off and saturation regions, providing precise control over power or signal flow.



Advantages of 2N5416 Transistor

  • Can handle extreme voltages up to –300 V
  • Durable TO-39 package for enhanced thermal control
  • Reliable gain characteristics over temperature variations
  • Low noise and leakage currents for clean signal amplification
  • Ideal for audio, RF, and industrial systems

Conclusion

The 2N5416 PNP transistor is a high-voltage, medium-current device ideal for audio amplifiers, control systems, and power regulators. With its –300 V collector-emitter voltage and 10 W power dissipation, it ensures consistent performance and reliability even in demanding electrical conditions.

The 2N5416 pinout (E–B-C) configuration, paired with its TO-39 metal casing, makes it a perfect fit for industrial, analog, and switching designs requiring superior electrical endurance and thermal reliability.

Datasheet & Pinout of 2N5416 PNP Transistor

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2n5416 pinout
2N5416 Transistor Datasheet and Specs

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