2N5306 Pinout, Equivalent, Application, Datasheet

The 2N5306 transistor is a NPN bipolar junction transistor (BJT) designed for low-power amplification and signal switching applications. It comes in a compact TO-92 plastic package, making it ideal for educational, hobbyist, and general-purpose electronic designs. The 2N5305 pinout refers to a low-power NPN transistor. With a collector-emitter voltage of 25 V, a collector current of 400 mA, and 400 mW power dissipation, the 2N5306 NPN transistor is widely used for low-frequency amplifier stages, signal conditioning circuits, and driver interfaces.

2n5306 datasheet pinout
2N5306 Transistor Datasheet and Specs

Introduction to 2N5306 NPN Transistor

The 2N5306 is a silicon-based NPN transistor with a small signal structure optimized for reliable switching and low-noise amplification. Built with an Emitter-Base-Collector (E-B-C) configuration, this transistor is suited for analog audio processing, low-level amplifiers, and control circuits.

In operation, the 2N5306 allows current flow when the base terminal is pulled low, typical of NPN devices. It offers stable current gain (hFE) and performs efficiently within its voltage range of 25 V, ensuring consistent performance even in compact circuit layouts.



2N5306 NPN Transistor

2N5306 transistor pin configuration diagram pinout
2N5306 Transistor Pin Configuration Diagram Pinout

Pinout of 2N5306

2N5306 transistor pin configuration pinout diagram
2N5306 Transistor Pin Configuration Pinout Diagram




Pin Configuration of 2N5306 Pinout

Pin#Pin Name
1Emitter
2Base
3Collector
2N5306 Pin Configuration



Key Features of 2N5306 Transistor

  • General-purpose silicon NPN transistor
  • Reliable for low-current switching and amplification
  • Compact TO-92 package for easy PCB and breadboard integration
  • Stable DC current gain with low noise performance
  • Ideal for audio preamplifiers, signal drivers, and small control circuits
  • Cost-effective and widely available

2N5306 Transistor Datasheet and Specifications

  • Transistor Type: NPN Silicon
  • Collector-Emitter Voltage (Vce): 25 V
  • Collector-Base Voltage (Vcb): 25 V
  • Emitter-Base Voltage (Veb): 5 V (typical)
  • Collector Current (Ic): 400 mA
  • Total Power Dissipation (Ptot): 400 mW
  • DC Current Gain (hFE): 50 – 150 (typical)
  • Transition Frequency (fT): 100 MHz (approx.)
  • Junction Temperature (Tj): –65 °C to +150 °C
  • Package Type: TO-92
  • Pin Configuration: Emitter – Base – Collector (E-B-C)



Equivalent and Alternative Transistors

You can use the following equivalent NPN transistors in place of the 2N5306, ensuring that pinout and ratings are checked before substitution:

  • BC547 – (45V, 100mA, TO-92)
  • 2N3904 – (40V, 200mA, TO-92)
  • 2N2222A – (40V, 800mA, TO-92/TO-18)
  • 2N4401 – (40V, 500mA, TO-92)

More Circuit Layouts




Applications of 2N5306 Transistor

The 2N5306 NPN transistor is ideal for a variety of low-current amplification and switching applications, such as:

  • Audio preamplifier and driver stages
  • Signal amplification in analog systems
  • Low-current LED or relay drivers
  • Logic signal inverting or control switching circuits
  • Pulse and waveform shaping applications
  • Educational and DIY electronics projects

Because of its stable gain and compact size, it is commonly used in small signal amplifiers, detector circuits, and timing modules.

Working Principle of 2N5306 Transistor

As a NPN transistor, the 2N5306 operates when its base terminal is driven negative relative to the emitter. A small current entering the base controls a much larger current flowing from emitter to collector.

In amplifier circuits, it operates in the active region, while in digital switching circuits it toggles between saturation (ON) and cut-off (OFF) states. This dual-mode capability allows the transistor to serve effectively in both analog and digital designs.

Thermal and Safe Operating Conditions

To maintain performance and extend component life:

  • Keep power dissipation below 400 mW with adequate heat dissipation.
  • Avoid exceeding the 25 V voltage limit on collector-emitter or collector-base junctions.
  • Use a base resistor to control base current and prevent overdrive.
  • Maintain junction temperature under 150 °C.
  • Ensure clean PCB layout and proper grounding in high-frequency designs.



Advantages of Using 2N5306

  • Simple to integrate with low-voltage control circuits
  • Provides reliable gain for small signal amplifiers
  • Economical and easily available in the market
  • Low collector-emitter saturation voltage improves efficiency

Conclusion

The 2N5306 NPN transistor is a dependable and efficient low-power device for signal amplification, switching, and control applications. With 25 V voltage rating, 400 mA current capacity, and 400 mW power dissipation, it is ideal for compact and cost-sensitive electronic circuits.

Its E-B-C pin configuration and TO-92 package make it user-friendly for both breadboard testing and production-level designs. Whether used in audio stages, sensors, or signal drivers, the 2N5306 offers consistent, stable performance across a wide range of small electronic projects.

Datasheet & Pinout of 2N5306 NPN Transistor

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2n5306 pinout
2N5306 Transistor Datasheet and Specs

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