The IRFP254 is a high-voltage N-Channel power MOSFET designed for efficient switching and power control applications. This article covers the IRFP254 pinout, features, specifications, working principle, applications, and suitable equivalents in a structured and SEO-optimized format.

Introduction
The IRFP254 is an enhancement-mode N-Channel MOSFET widely used in medium-to-high voltage power circuits. Its ability to handle high drain-source voltage along with stable thermal performance makes it suitable for industrial power supplies, inverters, and amplifier designs where reliability is critical.

Pin Configuration / Pinout of IRFP254 MOSFET

Understanding the IRFP254 Pinout Configuration
The IRFP254 is housed in a TO-220 package and follows a standard G-D-S pin arrangement:
| Pin# | Pin Name |
|---|---|
| 1 | Gate |
| 2 | Drain |
| 3 | Source |
Correct identification of the IRFP254 pinout is essential for proper circuit operation and device safety.
Note: DATASHEET DOWNLOAD button is provided end of this article.
IRFP254 Key Features
- N-Channel enhancement-mode MOSFET
- High drain-source voltage capability
- Efficient high-power switching performance
- Rugged construction for industrial use
- Good thermal stability
- TO-220 package for easy mounting and cooling
IRFP254 Specifications / Characteristics
- Drain-Source Voltage (VDS): 250V
- Gate-Source Voltage (VGS): ±20V
- Continuous Drain Current (ID): 23A
- Pulsed Drain Current (IDM): 92A
- Power Dissipation (PD): 180W
- Junction Temperature (Tj): 150 °C
- Storage Temperature Range (Tstg): −55 °C to +150 °C
- Package Type: TO-220
- Pin Configuration: Gate – Drain – Source
Key Applications of IRFP254 MOSFET
- Switch-mode power supplies (SMPS)
- DC-AC inverters
- Motor drive and control circuits
- High-voltage DC switching
- Power amplifier stages
IRFP254 Equivalent / Alternatives
(Verify pin compatibility before using substitutions)
Equivalent MOSFETs: IRFP250, IRFP260
Alternative MOSFETs: IRF644, IRF840, IRFP240
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Working Principle of IRFP254
The IRFP254 operates by applying a positive voltage to the gate relative to the source. When the gate voltage exceeds the threshold level, a conductive channel forms between the drain and source, allowing current flow. Removing or reducing the gate voltage turns the device OFF, enabling precise control of power switching.
Frequently Asked Questions (FAQ)
Q1: What type of MOSFET is IRFP254?
It is an N-Channel enhancement-mode power MOSFET.
Q2: Is IRFP254 suitable for high-voltage applications?
Yes, its high VDS rating makes it suitable for high-voltage power circuits.
Q3: Does IRFP254 require a heat sink?
Yes, a heat sink is recommended for continuous high-power operation.
Q4: Can IRFP254 be used in inverter circuits?
Yes, it is commonly used in inverter and SMPS designs.
Conclusion
The IRFP254 N-Channel MOSFET is a reliable solution for high-voltage and high-power electronic applications. With its robust TO-220 package, standard pinout, and stable electrical performance, it remains a strong choice for designers working on industrial and power control systems.
Datasheet of IRFP254 MOSFET
Click the following Button below to download the datasheet of IRFP254 :
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