Introduction
The IRF530 is a highly efficient N-channel power MOSFET engineered for a wide range of low-voltage, high-speed switching applications. With a robust design capable of handling a drain-source voltage of up to 100V and a continuous drain current of 14A, it is a versatile component for various power electronics circuits. A key feature is its low on-resistance, typically around 0.16Ω, which minimizes power loss and heat generation during operation. This makes the IRF530 an excellent choice for applications where efficiency is critical, such as DC-DC converters and switching regulators. Its industry-standard TO-220 package provides good thermal performance, ensuring reliable operation under load.
Another significant feature of the IRF530 is its optimized performance for high-speed switching. Its fast switching times are well-suited for PWM motor controls and bridge circuits, where precise control and rapid on/off transitions are essential. The device is also designed with a ruggedized gate and a fast recovery diode, which improves its durability and efficiency in commutation modes and against unexpected voltage transients. This makes it a dependable component in circuits that experience inductive loads. Its reliable performance and ease of use have made it a popular choice for both hobbyists and professionals working on projects such as audio amplifiers, robotics, and power supplies.
IRF530 N-Channel Power MOSFET
The IRF530’s combination of power handling, speed, and robustness makes it a staple in many electronic designs. It is particularly well-suited for applications where a reliable and cost-effective switch is required to manage power flow. Its ability to handle high energy in avalanche mode further contributes to its durability and safety margin. Whether for a simple switching circuit or a more complex power control system, the IRF530 MOSFET provides a balance of performance and reliability that is hard to beat.
IRF530 Pinout
IRF530 Power MOSFET Key Features
- Low on-state resistance VDSS = 100 V
- Fast switching
- Low thermal resistance
- Dynamic dv/dt Rating
- Repetitive Avalanche Rated
- 175’C Operating Temperature
- Type Designator: IRF530
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
IRF530 MOSFET Specifications/Characteristics
| Characterstics | Rating (Max) |
|---|---|
| Max Voltage Applied From Drain to Source: | 100V |
| Max Gate to Source Voltage Should Be: | ±20V |
| Max Continues Drain Current is : | 14A |
| Max Pulsed Drain Current is: | 56A |
| Max Power Dissipation is: | 79W |
| Minimum Voltage Required to Conduct: | 2V to 4V |
| Max Storage & Operating temperature Should Be: | -55 to +150 Centigrade |
More Circuit Layouts
Key Applications of IRF530 N-Channel Power MOSFET
- Uninterrupted power supplies
- Battery Chargers and BMS Circuits
- Solar power supply applications
- Motor Drivers
- Solenoid And Relay Drivers
- DC-DC & DC-AC Converter
- Automotive Environment
Equivalent MOSFETs of IRF530
- BUZ20
- IRFI530G
- IRFS530
- MTP12N10E
- RFP12N10
- STP13N10
- STP18N10
- BUK453-100B
- BUK453-100A
- BUZ72
- IRF641
- IRF642
- IRFB4620
- IRFB5620
Datasheet of IRF530 Power MOSFET
Click the following Button below to download the datasheet of IRF530 Power MOSFET :
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