The IRF3415 is a high-current N-Channel power MOSFET widely used in demanding power-switching applications. This article provides a complete technical overview, explaining the IRF3415 pinout, core features, electrical specifications, working principle, applications, and suitable equivalents to help engineers and hobbyists select the right component.
Introduction
The IRF3415 is an enhancement-mode N-Channel MOSFET designed for high-efficiency power control. With its high current capability and robust thermal performance, it is suitable for power supplies, motor control circuits, and high-speed switching systems where reliability and low losses are essential.
Pin Configuration / Pinout of IRF3415 MOSFET
Understanding the IRF3415 Pinout Configuration
The IRF3415 is available in a TO-220 package and follows a standard G-D-S pin layout:
| Pin# | Pin Name |
|---|---|
| 1 | Gate |
| 2 | Drain |
| 3 | Source |
Correct understanding of the IRF3415 pinout ensures safe operation and prevents installation errors.
Note: DATASHEET DOWNLOAD button is provided end of this article.
IRF3415 Key Features
- N-Channel enhancement-mode MOSFET
- High drain current capability
- Designed for high-power switching applications
- Low conduction losses for improved efficiency
- Fast switching characteristics
- TO-220 package for efficient heat dissipation
IRF3415 Specifications / Characteristics
- Drain-Source Voltage (VDS): 150V
- Gate-Source Voltage (VGS): ±20V
- Continuous Drain Current (ID): 43A
- Pulsed Drain Current (IDM): 150A
- Power Dissipation (PD): 200W
- Junction Temperature (Tj): 175°C
- Storage Temperature Range (Tstg): −55°C to +175°C
- Package Type: TO-220
- Pin Configuration: Gate – Drain – Source
Key Applications of IRF3415 MOSFET
- High-current DC motor drivers
- Switch-mode power supplies (SMPS)
- DC-DC converters
- Battery management systems
- Inverters and UPS systems
IRF3415 Equivalent / Alternatives
(Verify pin compatibility before using substitutions)
Equivalent MOSFETs: IRF3205, IRF3315
Alternative MOSFETs: IRF1404, IRF1405, FQP30N06
More Circuit Layouts
Working Principle of IRF3415
The IRF3415 operates by applying a suitable voltage to the gate terminal relative to the source. When the gate voltage exceeds the threshold, a conductive channel forms between the drain and source, allowing current to flow. Removing or reducing the gate voltage turns the MOSFET OFF, enabling precise and efficient power control.
Frequently Asked Questions (FAQ)
Q1: What type of MOSFET is IRF3415?
IRF3415 is an N-Channel enhancement-mode power MOSFET.
Q2: What is the maximum current rating of IRF3415?
It supports high continuous and pulsed drain currents when properly cooled.
Q3: Is a heat sink required for IRF3415?
Yes, for high-power applications, a heat sink is strongly recommended.
Q4: Can IRF3415 be driven directly by logic-level signals?
It typically requires proper gate drive voltage for full conduction and efficiency.
Conclusion
The IRF3415 N-Channel MOSFET is a powerful and reliable solution for high-current, high-efficiency switching applications. With strong thermal performance, robust electrical ratings, and a standard TO-220 package, it is an excellent choice for modern power electronics designs.
Datasheet of IRF3415 MOSFET
Click the following Button below to download the datasheet of IRF3415 :
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