BD538 PNP Transistor Pinout Datasheet

Introduction

The BD538 is a silicon PNP epitaxial-base power transistor designed for medium-power linear and switching applications. It provides excellent performance in audio amplifier stages, voltage regulators, and power driver circuits. With a collector current capacity of up to 8A and a collector-emitter voltage rating of –80V, the BD538 ensures reliable operation in both industrial and consumer-grade electronic systems.

This transistor features a TO-220 package, known for its high power dissipation capability and efficient heat management. The BD538 offers good current gain, low saturation voltage, and stable thermal behavior, making it ideal for applications requiring consistent performance under varying load conditions. Its ability to handle substantial current while maintaining low power loss makes it a popular choice in amplifier output stages and regulated power supplies.

BD538 PNP Transistor

The BD538 PNP transistor works effectively as the complementary pair to the BD537 NPN transistor. When used together in push-pull amplifier circuits, they deliver symmetrical signal handling, reduced distortion, and enhanced audio quality. This makes the BD538 a dependable choice for designers seeking balance between efficiency, durability, and cost-effectiveness.

Pinout of BD538

Key Features

• High collector current capability
• Medium voltage rating for versatile power circuits
• Low saturation voltage for efficient operation
• High DC current gain with temperature stability
• Durable TO-220 package for effective heat dissipation
• Ideal for switching and linear amplifier circuits
• Complementary to BD537 NPN transistor

Specifications/Characteristics

• Collector-Base Breakdown Voltage (VCBO) = –80 V
• Collector-Emitter Breakdown Voltage (VCEO) = –80 V
• Emitter-Base Breakdown Voltage (VEBO) = –5 V
• Collector Current (IC) = –8 A
• Total Power Dissipation (Ptot) at TC = 25 °C = 50 W
• Junction Temperature (TJ) = 150 °C
• Storage Temperature Range (Tstg) = –65 °C to +150 °C
• DC Current Gain (hFE) = 40 (typical at IC = 4 A, VCE = –4 V)
• Collector-Emitter Saturation Voltage (VCE(sat)) = –0.8 V (IC = 4 A, IB = –0.4 A)
• Transition Frequency (fT) = 3 MHz

Pin Configuration

Comparison BD538 (PNP) vs BD537 (NPN)

• The BD538 is a PNP power transistor, while the BD537 is its NPN complement. Both share identical electrical ratings, current capacity, and frequency characteristics, making them ideal counterparts in push-pull amplifier stages and balanced power switching systems.
• In operation, the BD537 handles the positive signal swing, while the BD538 manages the negative swing, ensuring linear and distortion-free performance. Together, they deliver excellent symmetry and thermal balance in audio and driver circuits, ensuring high reliability and long operational life.

More Circuit Layouts

Key Applications of BD538 PNP Transistor

• Audio power amplifier output stages
• Voltage and current regulator circuits
• Power control and driver circuits
• Push-pull and complementary amplifier designs
• Industrial and consumer-grade power electronics
• General-purpose medium-power switching

NPN Complimentary Transistor

• The NPN complementary transistor for BD538 is BD537.

Equivalent Transistors of BD538 PNP Transistor

• Possible equivalents or substitutes include BD536, BD442, and TIP42C, depending on the voltage and current requirements of the circuit. Always verify the electrical and thermal ratings before substitution.

Datasheet of BD538 PNP Transistor

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