BD435 NPN Transistor Pinout Datasheet

Introduction

The BD435 is a silicon epitaxial-base NPN power transistor intended for medium-power switching and linear amplifier applications. It belongs to the same transistor family as BD433 and BD437, packaged in a JEDEC SOT-32 / TO-126 plastic case, which is suited for modest heatsinking and robust mounting in amplifier or power circuits.

Designed as a successor variant offering higher voltage handling than BD433, BD435 is well-suited for circuits that require a little more voltage headroom while keeping current and power characteristics in the same class. The family datasheet explicitly calls out BD433, BD435, and BD437 as complementary NPN devices to PNP types BD434, BD436, and BD438 respectively.

BD435 NPN Transistor

In practical design use, BD435 finds application in audio output stages, switching circuits, and driver roles especially where BD433 might not suffice due to voltage constraints. Its moderate voltage rating combined with reliable gain and power capabilities make it attractive for balanced amplifier pairs or general purpose medium-power electronics.

Pinout of BD435

Key Features

• Enhanced voltage capability within the BD43x transistor family
• Balanced design for linear and switching operation
• Compatibility with complementary PNP devices (for push-pull designs)
• Plastic package amenable to moderate heat dissipation
• Stable performance in amplifier and driver circuits
• Good availability as a mid-class power transistor

Specifications/Characteristics

• Collector-Base Breakdown Voltage, VCBO = 32 V
• Collector-Emitter Breakdown Voltage, VCEO (or equivalently VCES with base open) = 32 V
• Emitter-Base Breakdown Voltage, VEBO = 5 V
• Continuous Collector Current, IC = 4 A
• Peak (Pulse) Collector Current, ICM = 7 A
• Base Current, IB = 1 A (maximum)
• Total Power Dissipation, Ptot = 36 W (case temperature = 25 °C)
• Maximum Junction Temperature, Tj = 150 °C
• Storage Temperature Range, Tstg = –65 to +150 °C
• DC Current Gain, hFE (typical) ~ 40 (under moderate conditions)
• Collector-Emitter Saturation Voltage, VCE(sat) = ~0.5 V (for IC = 2 A, IB = 0.2 A)

Pin Configuration

Comparison BD435 NPN vs BD436 PNP Complementary

• BD435 is an NPN transistor in the BD43x family, offering a breakdown voltage of 32 V and current capability of 4 A, suitable for use in medium-power amplifier and switching circuits.
• BD436, its complementary counterpart, is a PNP transistor designed to balance performance with BD435 in push-pull and symmetrical amplifier designs.
• When paired, BD435 and BD436 provide matched current, gain, and power handling (with opposite polarities), allowing circuits to perform symmetrically across positive and negative signal swings.

More Circuit Layouts

Key Applications of BD435 NPN Transistor

• Audio amplifier output and driver stages
• Push-pull complementary amplifier topologies
• Switching regulators and power supply circuits
• General-purpose medium-power switching roles
• Driver transistors in power control circuits

PNP Complimentary Transistor

• The PNP complementary device to BD435 is BD436

Equivalent Transistors of BD435 NPN Transistor

Some possible equivalents or alternative transistors include:

• BD433 (lower voltage variant within same family)
• BD437 (higher-voltage variant in the same family)
• Other NPN medium-power transistors with similar voltage/current ratings in TO-126 or TO-220 packages
• For particular use, general purpose power NPN BJTs like TIP41 or MJL series (if voltage and current needs align)

(Pin configuration of some transistors mentioned here may different from BD435).

Datasheet of BD435 NPN Transistor

Click the following Button to download the datasheet of BD435 Transistor :

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