Introduction
The 2SB817 is a powerful silicon PNP power transistor widely used in high-power amplification and switching circuits. It is engineered to be the complementary pair of the 2SD1047 NPN transistor, making it a perfect match for audio amplifier output stages. A key feature of the 2SB817 is its high power handling capability, with a maximum collector-base voltage (VCBO) of -160V and a continuous collector current (IC) of -12A. This robust design allows it to handle significant loads and operate reliably in high-voltage applications. The transistor is housed in a durable TO-3P package, which is excellent for heat dissipation, ensuring stable performance even under strenuous conditions.
The 2SB817 is a cornerstone component in high-power audio amplifiers, where it contributes to a clean and powerful output. When used in a push-pull configuration with the 2SD1047, it efficiently amplifies both the positive and negative halves of the audio signal, which is crucial for delivering high-fidelity sound. The transistor’s high DC current gain (hFE), with a maximum value of 200, enables a small input signal to control a large output, simplifying circuit design. It has a high transition frequency (fT) of 15MHz, which allows it to be used in various high-speed switching circuits.
2SB817 PNP Transistor
Beyond audio, the 2SB817 is a versatile power switch. Its ability to handle high voltage and current makes it suitable for use in DC-DC converters, switching regulators, and as a motor driver. It is also frequently used in power supply and inverter circuits where a reliable and efficient power switch is needed. The combination of its power handling, thermal efficiency, and compatibility with its NPN counterpart solidifies its reputation as a go-to transistor for power electronics projects.
2SB817 Pinout
2SB817 PNP Transistor Key Features
The 2SB817 is a high-power silicon PNP transistor that serves as a complementary partner to the 2SD1047 NPN transistor. It’s built for demanding applications, especially in power amplification and switching.
Key Features
- High Current Capability
- High Power Dissipation
- High Voltage Rating
- High DC Current Gain (hFE)
- Fast Switching Speed
- Complementary Pair
- Robust Package TO-3P package
2SB817 Transistor Specifications/Characteristics
| Characterstics | Rating (Max) |
|---|---|
| Max Collector Current(IC): | –12A |
| Max Collector-Emitter Voltage (VCE): | –140V |
| Max Collector-Base Voltage (VCB): | –160V |
| Max Emitter-Base Voltage (VEBO): | 6V |
| Max Collector Dissipation (Pc): | 100 Watt |
| Max Transition Frequency (fT): | 15 MHz |
| Minimum & Maximum DC Current Gain (hFE): | 60 To 200 |
| Max Storage & Operating temperature: | -40 to +150 Centigrade |
More Circuit Layouts
Key Applications of 2SB817 PNP Transistor
- High power audio amplifier
- Power Supply Applications
- Motor Driver Applications
- Battery Charger Applications
- Inverter Applications
- Drive load of up to -12A
NPN Complimentary Transistor
NPN Complementary of 2SB817 Transistor is 2SD1047.
Equivalent Transistors of 2SB817
2SA2120, 2SA1986, 2SA1943, 2SA1516, 2SA2151, 2SB1162
Datasheet of 2SB817 PNP Transistor
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