Introduction
The IRFP260 is a high-performance N-channel power MOSFET designed for demanding applications that require high current, high voltage, and efficient switching. As part of the HEXFET® family from manufacturers like International Rectifier (now Infineon), it utilizes advanced processing techniques to achieve an extremely low on-resistance, typically around 0.04Ω. This characteristic is crucial for minimizing power loss and reducing heat generation, leading to higher overall circuit efficiency. Its robust design is housed in a standard TO-247 package, which is well-suited for high-power industrial applications, offering superior thermal management and a high degree of durability.
One of the key features of the IRFP260 is its ability to handle a significant continuous drain current of up to 50A and a maximum drain-source voltage of 200V. This makes it an excellent choice for a wide variety of high-power applications, including switching power supplies, motor control circuits, and DC-DC converters. The MOSFET’s fast switching speed ensures that it can operate effectively in high-frequency environments, reducing switching losses and improving the dynamic performance of the system. Additionally, its dynamic dV/dt rating and repetitive avalanche-rated design make it highly resistant to voltage spikes and transient stresses, ensuring long-term reliability in rugged operating conditions.
IRFP260 N-Channel Power MOSFET
The IRFP260 is also popular for its ease of use and simple drive requirements. This simplifies the design of gate driver circuits, allowing for straightforward integration into complex systems. Its ability to be easily paralleled allows designers to scale up current handling capabilities for even more powerful applications, such as high-current inverters and uninterruptible power supplies (UPS). The component’s combination of high efficiency, robustness, and simple control has made it a go-to choice for engineers and hobbyists for projects ranging from sophisticated industrial power systems to high-fidelity audio amplifiers.
IRFP260 Pinout
IRFP260 Power MOSFET Key Features
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Ease of Paralleling
- Simple Drive Requirements
- Type Designator: IRFP260
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
IRFP260 MOSFET Specifications/Characteristics
| Characterstics | Rating (Max) |
|---|---|
| Drain-Source Voltage (VDS): | 200 V |
| Continuous Drain Current (ID): | 50A @ 25 °C, 30 A @ 100 °C |
| Maximum Power Dissipation (PD): | 300W @ 25 °C |
| Gate-Source Voltage (VGS): | ±20 V |
| Pulsed Drain Current (IDM) | 200 A |
| Single Pulse Avalanche Energy (EAS) | 560 mJ |
| Peak Diode Recovery dV/dtc (dV/dt) | 10 Vns |
| Operating Junction & Storage Temperature Range (TJ, Tstg) | -55 to + 175 °C |
| Linear Derating Factor | 2.0 W/°C |
| Repetitive Avalanche Currenta (IAR) | 50 A |
| Repetitive Avalanche Energya (EAR) | 30 mJ |
More Circuit Layouts
Key Applications of IRFP260 N-Channel Power MOSFET
- Battery Chargers Circuits
- UPS Circuits
- BMS Circuits
- DC to DC converters
- AC to DC converters
- Switch Mode Power Supplies
- Solar Chargers
- Solar Power Supplies
- Motor Drivers
- Audio Amplification Applications
Equivalent MOSFETs of IRFP260
- IRFP260N
- STW40N20
- MTW32N20E
- STW38NB20
Datasheet of IRFP260 Power MOSFET
Click the following Button below to download the datasheet of IRFP260 Power MOSFET :
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