Introduction
The IRFP250 is a high-performance N-channel power MOSFET widely used in a variety of high-power, high-frequency applications. As a third-generation power MOSFET, it is manufactured with advanced processing techniques to deliver a strong combination of low on-resistance, fast switching speeds, and exceptional ruggedness. This makes it an ideal choice for switching regulators, motor control circuits, and power converters where efficiency and reliability are paramount. It can handle a continuous drain current of up to 33A and a drain-source voltage of 200V, providing a robust solution for a wide range of demanding tasks. The TO-247 package provides excellent thermal dissipation, ensuring the device can operate reliably at higher power levels.

The IRFP250’s low on-resistance (RDS(on)), typically 0.085Ω, significantly reduces power loss during the conduction state, minimizing heat generation and improving overall system efficiency. Its fast switching speed, with turn-on and turn-off times in the nanosecond range, makes it highly effective in high-frequency switching applications, such as DC-DC converters and inverters. The dynamic dV/dt rating and repetitive avalanche rating are crucial features that ensure the MOSFET’s durability and ability to withstand the electrical stresses of inductive loads, providing a higher level of reliability.
IRFP250 Power MOSFET

This MOSFET’s design also features a simple gate drive, making it easy to operate directly from many integrated circuits without complex gate driver circuitry. Its ability to be easily paralleled allows for scaling up current handling capabilities to meet the requirements of even higher-power applications. The IRFP250 is a go-to component for professionals and hobbyists alike for a wide range of projects, including audio amplifiers, welding equipment, and uninterruptible power supplies (UPS), where its excellent performance and reliability make it a top choice.
IRFP250 Pinout

IRFP250 Power MOSFET Key Features
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Ease of Paralleling
- Simple Drive Requirements
IRFP250 MOSFET Specifications/Characteristics
Characterstics | Rating (Max) |
---|---|
Drain-Source Voltage (VDS): | 200 V |
Continuous Drain Current (ID): | 30A @ 25 °C, 21 A @ 100 °C |
Maximum Power Dissipation (PD): | 214W @ 25 °C |
Gate-Source Voltage (VGS): | ±20 V |
Pulsed Drain Current (IDM) | 120 A |
Single Pulse Avalanche Energy (EAS) | 315 mJ |
Peak Diode Recovery dV/dtc (dV/dt) | 8.6 Vns |
Operating Junction & Storage Temperature Range (TJ, Tstg) | -55 to + 175 °C |
Linear Derating Factor | 1.4 W/°C |
Repetitive Avalanche Currenta (IAR) | 30 A |
Repetitive Avalanche Energya (EAR) | 21 mJ |
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Key Applications of IRFP250 N-Channel Power MOSFET
The IRFP250 MOSFET’s robust electrical characteristics and high-performance design make it a versatile component for a range of power electronics applications. Here are some of its key uses:
- Switching Power Supplies (SMPS) and DC-DC Converters: Its fast switching speed and low on-resistance minimize energy loss during the switching process, making it highly efficient for regulating and converting power in applications like computer power supplies, battery chargers, and other electronic devices.
- Motor Control Circuits: The ability to handle high currents and its rugged design make the IRFP250 a suitable choice for controlling DC and AC motors. It provides precise control over motor speed and torque in applications ranging from industrial machinery to electric vehicles.
- Audio Amplifiers: Due to its excellent linear transfer characteristics and ability to manage significant power, the IRFP250 is a popular choice for building high-fidelity audio amplifiers. It contributes to clean, powerful, and reliable sound reproduction.
- Inverter Circuits: The MOSFET is commonly used in inverters that convert DC power to AC power. This is essential for systems like solar power inverters, uninterruptible power supplies (UPS), and renewable energy systems where efficient and reliable power conversion is required.
- High-Energy Pulse and Welding Equipment: Its robust construction and high pulsed current rating allow the IRFP250 to withstand and control high-energy pulses, making it a reliable component in applications such as welding equipment and other high-current pulse circuits.
- Lighting Control: The IRFP250 can be used in lighting applications, such as high-power LED dimmers and flashers, where its fast switching and efficient performance help manage light intensity and create dynamic lighting effects.
Equivalent MOSFETs of IRFP250
While an exact one-for-one replacement is rarely possible, several MOSFETs are considered functional equivalents or suitable alternatives for the IRFP250, provided their specifications match the specific needs of your circuit. When selecting a substitute, prioritize matching the drain-source voltage (VDS), continuous drain current (ID), and on-resistance (RDS(on)).
Here’s a list of common equivalent MOSFETs for the IRFP250:
- IRFP250N: The modern version from Infineon. It has very similar, often slightly better, specs but is known to be less robust to “abuse” compared to the original.
- IRFP260: A higher-power counterpart with the same 200V rating but a significantly higher drain current of 50A and a lower on-resistance. This can be a reliable upgrade.
- STP20N20: An N-channel MOSFET from STMicroelectronics with comparable ratings, making it a good cross-reference option.
- IRFP240: A related MOSFET with the same 200V rating but a slightly lower drain current and higher on-resistance. It’s a viable alternative for applications with less demanding current requirements.
- FQA29N20: Manufactured by Fairchild, this MOSFET is also a 200V, 29A component that can be used as a substitute in many applications.
Datasheet of IRFP250 Power MOSFET
Click the following Button below to download the datasheet of IRFP250 Power MOSFET :
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