IRF730 Pinout, Equivalent, Application, Datasheet

The IRF730 is a high-voltage N-Channel MOSFET designed for SMPS circuits, inverter stages, high-voltage DC switching, and power conversion applications. With a 400V drain-source rating and reliable TO-220 packaging, it is widely used in medium-power but high-voltage electronic designs. Understanding the IRF730 pinout is crucial for safely integrating the device into switching supplies, power regulators, and high-frequency converter circuits where efficient switching and stable thermal behavior are required.

IRF730 datasheet pinout equivalent specification mosfet
IRF730 MOSFET Datasheet and Specs

Introduction to IRF730 N-Channel MOSFET

The IRF730 is an enhancement-mode MOSFET optimized for high-voltage applications requiring efficient switching, low losses, and stable performance. With its ability to handle up to 400V VDS and 5.5A continuous drain current, it is ideal for circuits such as LED drivers, flyback converters, high-voltage power supplies, and inverter modules. Its robust die construction and fast switching capability make it a dependable choice in both consumer and industrial electronics.



IRF730 N-Channel MOSFET

IRF730 mosfet pin configuration diagram pinout
IRF730 MOSFET Pin Configuration Diagram Pinout

Pinout of IRF730

IRF730 mosfet pin configuration pinout diagram
IRF730 MOSFET Pin Configuration Diagram Pinout




Pin Configuration of IRF730 Pinout

The IRF730 is packaged in the TO-220 case with the following pin order (front view, pins downward):

Pin#Pin Name
1Gate
2Drain
3Source
IRF730 Pin Configuration

This G-D-S configuration ensures proper switching performance in power converters and high-voltage switching circuits.



Key Features of IRF730 MOSFET

  • High-voltage drain-source capability
  • Medium current handling for power switching
  • Fast switching performance
  • Low gate drive power requirement
  • Rugged TO-220 packaging
  • Suitable for high-frequency converter circuits
  • Enhanced thermal stability

Datasheet and Specifications of IRF730 MOSFET

  • Drain-Source Voltage (VDS): 400V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 5.5A
  • Pulsed Drain Current (IDM): 22A
  • Total Power Dissipation (Ptot): 100W
  • On-Resistance (RDS(on)): 0.75Ω
  • Storage Temperature (Tstg): -65°C to +150°C
  • Junction Temperature (TJ): 150°C
  • Package Type: TO-220
  • Pin Configuration: G-D-S



Working Principle of IRF730 MOSFET

The IRF730 operates as an enhancement-mode MOSFET, remaining OFF at zero gate voltage. When a positive voltage is applied to the gate, it forms a conductive channel between the drain and source. Its high breakdown voltage and stable switching performance make it ideal for flyback converters, half-bridge circuits, and high-voltage DC switching systems. The device’s fast rise and fall times reduce switching losses, enhancing power efficiency.

More Circuit Layouts




Applications of IRF730 MOSFET

  • High-voltage SMPS circuits
  • LED drivers and CFL ballasts
  • High-voltage DC-DC converters
  • Inverter modules
  • Flyback converters
  • Power regulation circuits
  • High-voltage switching applications

Equivalent and Alternative MOSFETs

Possible replacements or equivalents include:

  • IRF740 (higher voltage, similar function)
  • IRF720 (lower current alternative)
  • STP9NK50Z
  • FQP6N60
  • IRF830 (higher voltage, similar applications)

Always compare voltage, current, and RDS(on) before substituting.



Frequently Asked Questions (FAQ)

Q1: Does IRF730 require a heatsink?
Yes, for continuous currents above 2A, a heatsink is recommended.

Q2: Is IRF730 a logic-level MOSFET?
No, it requires at least 10V gate drive for efficient switching.

Q3: Can IRF730 be used in high-frequency SMPS?
Yes, it performs well in medium-to-high-frequency power supplies.

Q4: Is IRF730 suitable for inverter circuits?
Yes, especially for medium-power high-voltage inverter stages.

Conclusion

The IRF730 N-Channel MOSFET is a robust, efficient, and reliable device designed for high-voltage switching applications. Its 400V blocking capability, fast switching performance, and durable TO-220 package make it a strong choice for SMPS circuits, converters, inverters, and power regulation systems. With proper pinout understanding and gate-drive design, it delivers excellent performance in demanding power electronics.

Datasheet & Pinout of IRF730 N-Channel MOSFET

Click the following Button to download the datasheet of IRF730 MOSFET :

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IRF730 datasheet pinout equivalent specification mosfet
IRF730 MOSFET Datasheet and Specs

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