IRF5210 Pinout, Equivalent Application, Datasheet

The IRF5210 is a powerful P-Channel MOSFET used in high-power switching, inverter circuits, audio amplifiers, and industrial control systems. With its IRF5210 pinout, extremely low RDS(on), and high current capability, it provides excellent switching efficiency, stable SOA performance, and reliable thermal handling. This device is widely chosen for high-side switching and demanding power applications requiring both high voltage and high current performance.

Introduction to IRF5210 P-Channel MOSFET

The IRF5210 is a rugged and efficient P-Channel enhancement MOSFET designed for high-current and high-voltage switching tasks. With a drain-source voltage of –100V and a continuous drain current of –40A, it is much stronger than typical P-Channel MOSFETs, making it suitable for advanced power supplies, inverter designs, high-current battery systems, and industrial power controllers. Its very low RDS(on) of 0.06Ω significantly reduces conduction losses, while the TO-220 package enables reliable heat dissipation. Engineers widely use it where robust P-Channel switching and exceptional efficiency are required.

IRF5210 P-Channel MOSFET

Pinout of IRF5210

Understanding the IRF5210 Pinout Configuration

The IRF5210 is packaged in a TO-220 case and uses the G-D-S (Gate–Drain–Source) pin arrangement.
Here is the pin configuration:

Pin Configuration of IRF5210 Pinout

Key Features of IRF5210 MOSFET

• Ultra-low RDS(on) for minimal conduction losses
• High-current P-Channel power MOSFET
• Fast switching capability
• Excellent thermal stability
• Rugged TO-220 package
• High pulsed current capability
• Ideal for high-side power control

IRF5210 MOSFET Datasheet and Specifications

• Drain-Source Voltage (VDS): –100V
• Gate-Source Voltage (VGS): ±20V
• Continuous Drain Current (ID): –40A
• Pulsed Drain Current (IDM): –140A
• Total Power Dissipation (Ptot): 200W
• On-State Resistance (RDS(on)): 0.06Ω
• Operating Junction Temperature (TJ): –55°C to +175°C
• Package Type: TO-220
• Pin Configuration: G-D-S

Working Principle of IRF5210 MOSFET

The IRF5210 is a P-Channel enhancement-mode MOSFET, meaning it turns ON when a sufficiently negative gate-to-source voltage is applied. When the gate is driven negative relative to the source, a conductive channel forms, allowing current to flow from source to drain. Its extremely low RDS(on) value ensures efficient operation in high-current circuits, making it well suited for inverter stages, high-side switching, motor drivers, and battery-powered control systems. Because of its fast switching capability, it performs well in PWM-based power regulation.

More Circuit Layouts

Applications of IRF5210 MOSFET

• High-power audio amplifier output stages
• High-side switching circuits
• Power inverters and DC-DC converters
• Motor control systems
• Battery management and protection circuits
• Solar inverters and charge controllers
• Industrial power controllers
• High-current low-loss switching systems

Equivalent and Alternative MOSFETs

Equivalent MOSFETs:

• IRF9540 (lower current)
• IRF9520
• AOD4184A
• FQP27P06

Alternatives (verify ratings & pinout):

• IRF5305
• IRF5210S (surface-mount version)
• IXTP64P05T
• SUP75P03

(Always verify pinout, voltage rating, and thermal specs before substitution.)

Frequently Asked Questions (FAQ)

Q1: What makes the IRF5210 more powerful than typical P-channel MOSFETs?
Its very high current rating of –40A and low 0.06Ω RDS(on) make it exceptionally strong.

Q2: Is IRF5210 suitable for audio amplifiers?
Yes, it is often used in high-power amplifier output stages.

Q3: Can IRF5210 be used for high-side switching?
Yes, it is ideal for high-side switching applications due to its P-Channel structure.

Q4: What is the complementary N-Channel MOSFET for IRF5210?
A common complement is IRF3710 or IRF3205 depending on the application.

Conclusion

The IRF5210 is a high-performance P-Channel MOSFET designed for demanding power applications requiring high voltage, high current, and exceptional switching efficiency. With a –100V rating, –40A current capability, and extremely low RDS(on), it stands out as one of the strongest P-Channel MOSFETs in the TO-220 category. Its durability, fast switching response, and excellent thermal handling make it an excellent choice for industrial power supplies, inverters, motor drivers, and high-side switching designs.

Datasheet & Pinout of IRF5210 P-Channel MOSFET

Click the following Button to download the datasheet of IRF5210 MOSFET :

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