The FQP20N60 is a high-voltage N-Channel power MOSFET widely used in SMPS and power control circuits. This article explains the FQP20N60 pinout, features, specifications, working principle, applications, and alternatives in a clear and consistent format.
Introduction
The FQP20N60 is an enhancement-mode N-Channel MOSFET designed for high-voltage and high-power switching applications. With its 600V drain-source rating and strong current handling capability, it is commonly used in offline power supplies, inverters, and industrial power electronics. The TO-220 package provides effective thermal performance for demanding designs.
Pin Configuration / Pinout of FQP20N60 MOSFET
Understanding the FQP20N60 Pinout Configuration
The FQP20N60 is housed in a TO-220 package with a G-D-S pin configuration:
| Pin# | Pin Name |
|---|---|
| 1 | Gate |
| 2 | Drain |
| 3 | Source |
Correct identification of the FQP20N60 pinout is essential for safe and efficient circuit operation.
Note: DATASHEET DOWNLOAD button is provided end of this article.
FQP20N60 Key Features
- High-voltage N-Channel power MOSFET
- Designed for fast switching applications
- Suitable for high-frequency power supplies
- Robust avalanche energy capability
- Low conduction losses for improved efficiency
- TO-220 package for effective heat dissipation
FQP20N60 Specifications / Characteristics
- Drain-Source Voltage (VDS): 600V
- Gate-Source Voltage (VGS): ±30V
- Continuous Drain Current (ID): 20A
- Pulsed Drain Current (IDM): 80A
- Power Dissipation (PD): 417W
- Junction Temperature (Tj): 150°C
- Storage Temperature Range (Tstg): −55°C to +150°C
- Package Type: TO-220
- Pin Configuration: Gate – Drain – Source
Key Applications of FQP20N60 MOSFET
- Switched-mode power supplies (SMPS)
- Inverters and UPS systems
- Motor control circuits
- High-voltage DC-DC converters
- Industrial power electronics
FQP20N60 Equivalent / Alternatives
(Verify pin compatibility before using substitutions)
Equivalent MOSFETs: FDP20N60, FQA20N60
Alternative MOSFETs: IRFP460, STP20NM60, IXFH20N60
More Circuit Layouts
Working Principle of FQP20N60
The FQP20N60 operates by applying a positive voltage to the gate relative to the source. Once the gate threshold is exceeded, a conductive channel forms between the drain and source, allowing current to flow. When the gate voltage is removed, the channel collapses, turning the device off. This fast and efficient switching behavior makes it ideal for high-voltage power conversion systems.
Frequently Asked Questions (FAQ)
Q1: Is FQP20N60 suitable for high-voltage applications?
Yes, it is rated for up to 600V, making it ideal for high-voltage designs.
Q2: What is the FQP20N60 pin configuration?
The pinout is Gate-Drain-Source (G-D-S).
Q3: Can FQP20N60 be used in SMPS circuits?
Yes, it is commonly used in SMPS and inverter applications.
Q4: What package does the FQP20N60 use?
It is available in a TO-220 package.
Conclusion
The FQP20N60 N-Channel MOSFET is a reliable choice for high-voltage and high-power switching applications. Its strong electrical ratings, fast switching performance, and robust TO-220 package make it well-suited for SMPS, inverters, and industrial power systems.
Datasheet of FQP20N60 MOSFET
Click the following Button below to download the datasheet of FQP20N60 :
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