The FQP13N50 or 13N50 is a high-voltage N-Channel power MOSFET designed for demanding switching applications. This guide covers the FQP13N50 pinout, features, specifications, working principle, applications, and equivalent alternatives in a clear and optimized format.
Introduction
The FQP13N50 is an enhancement-mode N-Channel MOSFET optimized for high-voltage power electronics. With a 500V drain-source rating and strong current handling capability, it is widely used in SMPS, power inverters, and industrial switching circuits. The TO-220 package allows efficient heat dissipation and easy mounting on heat sinks.
Pin Configuration / Pinout of FQP13N50 MOSFET
Understanding the FQP13N50 Pinout Configuration
The FQP13N50 is housed in a TO-220 package with a standard G-D-S pin configuration:
| Pin# | Pin Name |
|---|---|
| 1 | Gate |
| 2 | Drain |
| 3 | Source |
Correct identification of the FQP13N50 pinout is essential for reliable circuit operation.
Note: DATASHEET DOWNLOAD button is provided end of this article.
FQP13N50 Key Features
- N-Channel enhancement-mode MOSFET
- High-voltage switching capability
- Fast switching performance
- Rugged and reliable design
- Suitable for high-frequency power circuits
- TO-220 package for effective thermal management
FQP13N50 Specifications / Characteristics
- Drain-Source Voltage (VDS): 500V
- Gate-Source Voltage (VGS): ±30V
- Continuous Drain Current (ID): 12.5A
- Pulsed Drain Current (IDM): 50A
- Power Dissipation (PD): 170W
- Junction Temperature (Tj): 150°C
- Storage Temperature Range (Tstg): −55°C to +150°C
- Package Type: TO-220
- Pin Configuration: Gate – Drain – Source
Key Applications of FQP13N50 MOSFET
- Switch-mode power supplies (SMPS)
- High-voltage DC-DC converters
- Power inverters
- Industrial power switching
- Motor drive and control circuits
FQP13N50 Equivalent / Alternatives
(Verify pin compatibility before using substitutions)
Equivalent MOSFETs: FQP10N50, FQP20N60
Alternative MOSFETs: IRF840, STP13NK50Z, FDPF13N50
More Circuit Layouts
Working Principle of FQP13N50
The FQP13N50 operates by applying a positive voltage to the gate relative to the source. When the gate voltage exceeds the threshold value, a conductive channel forms between the drain and source, allowing current to flow. Removing the gate voltage turns the device off, enabling efficient high-voltage switching with low gate drive power.
Frequently Asked Questions (FAQ)
Q1: What is the maximum voltage rating of FQP13N50?
The FQP13N50 supports a drain-source voltage of up to 500V.
Q2: What is the pin configuration of FQP13N50?
It uses a Gate-Drain-Source (G-D-S) pin layout in a TO-220 package.
Q3: Is FQP13N50 suitable for SMPS designs?
Yes, it is commonly used in high-voltage SMPS and inverter circuits.
Q4: Does FQP13N50 require a heat sink?
For high-power applications, using a heat sink is recommended to ensure thermal stability.
Conclusion
The FQP13N50 N-Channel MOSFET is a robust and efficient solution for high-voltage switching applications. With its 500V rating, solid current capability, and TO-220 package, it is well suited for SMPS, inverters, and industrial power electronics where reliability and performance are critical.
Datasheet of FQP13N50 MOSFET
Click the following Button below to download the datasheet of FQP13N50 :
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