The FQP13N10 or 13N10 is a rugged N-Channel power MOSFET designed for efficient medium-voltage switching applications. This article explains the FQP13N10 pinout, key features, datasheet specifications, working principle, applications, and equivalent devices, providing a complete technical overview.
Introduction
The FQP13N10 is an enhancement-mode N-Channel MOSFET optimized for power switching where higher voltage headroom is required. With a 100V drain-source rating and solid current handling capability, it is commonly used in SMPS, motor control, and DC power switching circuits. The TO-220 package supports effective thermal management and easy mounting.
Pin Configuration / Pinout of FQP13N10 MOSFET
Understanding the FQP13N10 Pinout Configuration
The FQP13N10 comes in a TO-220 package with a standard G-D-S pin configuration:
| Pin# | Pin Name |
|---|---|
| 1 | Gate |
| 2 | Drain |
| 3 | Source |
Correct understanding of the FQP13N10 pinout ensures safe operation and reliable circuit performance.
Note: DATASHEET DOWNLOAD button is provided end of this article.
FQP13N10 Key Features
- N-Channel enhancement-mode power MOSFET
- Medium-voltage switching capability
- Fast switching performance
- Rugged and reliable silicon design
- Suitable for PWM and power control circuits
- TO-220 package for efficient heat dissipation
FQP13N10 Specifications / Characteristics
- Drain-Source Voltage (VDS): 100V
- Gate-Source Voltage (VGS): ±25V
- Continuous Drain Current (ID): 12.8A
- Pulsed Drain Current (IDM): 51.2A
- Power Dissipation (PD): 65W
- Junction Temperature (Tj): 175°C
- Storage Temperature Range (Tstg): −55°C to +175°C
- Package Type: TO-220
- Pin Configuration: Gate – Drain – Source
Key Applications of FQP13N10 MOSFET
- Switching power supplies
- DC motor control circuits
- DC-DC converters
- Power inverters
- General-purpose power switching
FQP13N10 Equivalent / Alternatives
(Verify pin compatibility before using substitutions)
Equivalent MOSFETs: FQP13N06, FQP10N20
Alternative MOSFETs: IRF540, IRLZ44N, IRFZ34
More Circuit Layouts
Working Principle of FQP13N10
The FQP13N10 operates by applying a positive voltage to the gate relative to the source. When the gate voltage exceeds the threshold level, a conductive channel forms between the drain and source, allowing current to flow. Removing or reducing the gate voltage turns the MOSFET off, enabling efficient high-speed switching with low control power.
Frequently Asked Questions (FAQ)
Q1: Is FQP13N10 suitable for 100V switching applications?
Yes, its 100V VDS rating makes it suitable for medium-voltage power circuits.
Q2: What is the pin configuration of FQP13N10?
The pin configuration is Gate-Drain-Source (G-D-S).
Q3: Can FQP13N10 be driven directly from logic-level signals?
It can be driven from moderate gate voltages, but a proper gate driver is recommended for best performance.
Q4: What package is used for FQP13N10?
The device is supplied in a TO-220 package.
Conclusion
The FQP13N10 N-Channel MOSFET is a reliable choice for medium-voltage, high-efficiency switching applications. With strong electrical ratings, fast switching behavior, and a thermally efficient TO-220 package, it is well suited for SMPS, motor control, and general power electronics designs.
Datasheet of FQP13N10 MOSFET
Click the following Button below to download the datasheet of FQP13N10 :
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