The FQP10N50 is a high-voltage N-Channel power MOSFET designed for efficient switching applications. This article explains the FQP10N50 pinout, key features, specifications, working principle, applications, and equivalent alternatives in a clear, structured format.
Introduction
The FQP10N50 is an enhancement-mode N-Channel MOSFET optimized for medium-to-high voltage power switching. With a 500V drain-source rating and solid current handling capability, it is widely used in SMPS, inverters, and power control circuits. Its TO-220 package supports easy mounting and effective heat dissipation.
Pin Configuration / Pinout of FQP10N50 MOSFET
Understanding the FQP10N50 Pinout Configuration
The FQP10N50 is housed in a TO-220 package with a G-D-S pin configuration:
| Pin# | Pin Name |
|---|---|
| 1 | Gate |
| 2 | Drain |
| 3 | Source |
Correct identification of the FQP10N50 pinout is essential for safe circuit design.
Note: DATASHEET DOWNLOAD button is provided end of this article.
FQP10N50 Key Features
- High-voltage N-Channel power MOSFET
- Designed for fast and efficient switching
- Suitable for high-frequency applications
- Rugged and reliable performance
- Low switching losses
- TO-220 package for efficient thermal dissipation
FQP10N50 Specifications / Characteristics
- Drain-Source Voltage (VDS): 500V
- Gate-Source Voltage (VGS): ±30V
- Continuous Drain Current (ID): 10A
- Pulsed Drain Current (IDM): 40A
- Power Dissipation (PD): 143W
- Junction Temperature (Tj): 150°C
- Storage Temperature Range (Tstg): −55°C to +150°C
- Package Type: TO-220
- Pin Configuration: Gate – Drain – Source
Key Applications of FQP10N50 MOSFET
- Switched-mode power supplies (SMPS)
- High-voltage DC-DC converters
- Inverter circuits
- Power factor correction (PFC) systems
- Industrial power switching applications
FQP10N50 Equivalent / Alternatives
(Verify pin compatibility before using substitutions)
Equivalent MOSFETs: FQP11N50, FDP10N50
Alternative MOSFETs: IRF840, STP10NK50Z, IXFH10N50
More Circuit Layouts
Working Principle of FQP10N50
The FQP10N50 operates by applying a positive voltage to the gate relative to the source. When this voltage exceeds the threshold level, a conductive channel forms between the drain and source, allowing current to flow. Removing the gate voltage turns the MOSFET off, making it suitable for efficient high-speed switching.
Frequently Asked Questions (FAQ)
Q1: Is FQP10N50 suitable for SMPS designs?
Yes, it is commonly used in SMPS and high-voltage switching circuits.
Q2: What is the pin configuration of FQP10N50?
The pinout is Gate-Drain-Source (G-D-S).
Q3: What package is used for FQP10N50?
It is available in a TO-220 package.
Q4: Can FQP10N50 handle high-frequency switching?
Yes, it is designed for efficient high-frequency operation.
Conclusion
The FQP10N50 N-Channel MOSFET provides reliable high-voltage performance, efficient switching behavior, and robust thermal handling. Its electrical characteristics and TO-220 package make it a dependable choice for SMPS, inverters, and industrial power electronics applications.
Datasheet of FQP10N50 MOSFET
Click the following Button below to download the datasheet of FQP10N50 :
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