The FQP10N20 is a high-voltage N-Channel power MOSFET designed for efficient switching and power control applications. This article provides a complete overview of the FQP10N20 pinout, key features, electrical specifications, working principle, applications, and suitable equivalents to help engineers and hobbyists use it correctly.
Introduction
The FQP10N20 is an enhancement-mode N-Channel MOSFET optimized for medium- to high-voltage power switching circuits. With a drain-source voltage rating of 200V and reliable current handling capability, it is commonly used in SMPS designs, power inverters, and industrial switching applications. Its TO-220 package allows easy mounting with effective heat dissipation.
Pin Configuration / Pinout of FQP10N20 MOSFET
Understanding the FQP10N20 Pinout Configuration
The FQP10N20 comes in a TO-220 package and follows the standard G-D-S pin configuration:
| Pin# | Pin Name |
|---|---|
| 1 | Gate |
| 2 | Drain |
| 3 | Source |
Correct understanding of the FQP10N20 pinout is essential for safe and reliable circuit operation.
Note: DATASHEET DOWNLOAD button is provided end of this article.
FQP10N20 Key Features
- N-Channel enhancement-mode MOSFET
- Designed for high-voltage switching applications
- Fast switching performance
- Rugged and reliable design
- Suitable for SMPS and power control circuits
- TO-220 package for efficient thermal management
FQP10N20 Specifications / Characteristics
- Drain-Source Voltage (VDS): 200V
- Gate-Source Voltage (VGS): ±30V
- Continuous Drain Current (ID): 9.5A
- Pulsed Drain Current (IDM): 38A
- Power Dissipation (PD): 72W
- Junction Temperature (Tj): 150°C
- Storage Temperature Range (Tstg): −55°C to +150°C
- Package Type: TO-220
- Pin Configuration: Gate – Drain – Source
Key Applications of FQP10N20 MOSFET
- Switch-mode power supplies (SMPS)
- Power inverters
- Industrial power switching circuits
- Motor control systems
- High-voltage DC switching applications
FQP10N20 Equivalent / Alternatives
(Verify pin compatibility before using substitutions)
Equivalent MOSFETs: FQP10N50, FQP10N60
Alternative MOSFETs: IRF840, IRF740, STP10NK60Z
More Circuit Layouts
Working Principle of FQP10N20
The FQP10N20 operates by applying a positive voltage to the gate relative to the source. When the gate voltage exceeds the threshold level, a conductive channel forms between the drain and source, allowing current to flow. Removing the gate voltage turns the device off, making it suitable for fast and efficient power switching.
Frequently Asked Questions (FAQ)
Q1: Is FQP10N20 suitable for high-voltage SMPS designs?
Yes, its 200V rating makes it suitable for medium- to high-voltage SMPS applications.
Q2: What is the pin configuration of FQP10N20?
The pin configuration is Gate-Drain-Source (G-D-S).
Q3: Can FQP10N20 handle pulsed currents?
Yes, it supports high pulsed drain current when used within thermal limits.
Q4: What package is FQP10N20 available in?
It is available in the TO-220 package.
Conclusion
The FQP10N20 N-Channel MOSFET is a reliable choice for high-voltage power switching applications. With strong electrical ratings, fast switching capability, and a robust TO-220 package, it is well suited for SMPS, inverter, and industrial power control designs.
Datasheet of FQP10N20 MOSFET
Click the following Button below to download the datasheet of FQP10N20 :
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