The FQP10N60 is a high-voltage N-Channel power MOSFET designed for efficient switching applications. This article explains the FQP10N60 pinout, key features, electrical specifications, working principle, applications, and suitable equivalents in a structured format.
Introduction
The FQP10N60 is an enhancement-mode N-Channel MOSFET optimized for high-voltage and moderate-current applications. With a 600V drain-source rating and reliable switching performance, it is widely used in SMPS, inverters, and power control circuits. Its TO-220 package allows effective heat dissipation in compact designs.
Pin Configuration / Pinout of FQP10N60 MOSFET
Understanding the FQP10N60 Pinout Configuration
The FQP10N60 comes in a TO-220 package with a G-D-S pin arrangement:
| Pin# | Pin Name |
|---|---|
| 1 | Gate |
| 2 | Drain |
| 3 | Source |
Correct identification of the FQP10N60 pinout ensures safe and reliable circuit operation.
Note: DATASHEET DOWNLOAD button is provided end of this article.
FQP10N60 Key Features
- High-voltage N-Channel power MOSFET
- Suitable for fast switching applications
- Designed for high-frequency power circuits
- Rugged avalanche capability
- Low switching and conduction losses
- TO-220 package for efficient thermal management
FQP10N60 Specifications / Characteristics
- Drain-Source Voltage (VDS): 600V
- Gate-Source Voltage (VGS): ±30V
- Continuous Drain Current (ID): 9.5A
- Pulsed Drain Current (IDM): 38A
- Power Dissipation (PD): 156W
- Junction Temperature (Tj): 150°C
- Storage Temperature Range (Tstg): −55°C to +150°C
- Package Type: TO-220
- Pin Configuration: Gate – Drain – Source
Key Applications of FQP10N60 MOSFET
- Switched-mode power supplies (SMPS)
- High-voltage DC-DC converters
- Inverters and UPS systems
- Power factor correction (PFC) circuits
- Industrial power switching applications
FQP10N60 Equivalent / Alternatives
(Verify pin compatibility before using substitutions)
Equivalent MOSFETs: FQA10N60, FDP10N60
Alternative MOSFETs: STP10NK60Z, IRFBC40, IXFH10N60
More Circuit Layouts
Working Principle of FQP10N60
The FQP10N60 operates by applying a positive voltage to the gate with respect to the source. When the gate threshold voltage is exceeded, a conductive channel forms, allowing current to flow between drain and source. Removing the gate voltage turns the device off, enabling efficient high-speed switching in power circuits.
Frequently Asked Questions (FAQ)
Q1: Is FQP10N60 suitable for high-voltage power supplies?
Yes, its 600V rating makes it suitable for offline and high-voltage power supplies.
Q2: What is the FQP10N60 pin configuration?
The pinout is Gate-Drain-Source (G-D-S).
Q3: Can FQP10N60 be used in SMPS circuits?
Yes, it is commonly used in SMPS and power conversion designs.
Q4: What package is used for FQP10N60?
The FQP10N60 is available in a TO-220 package.
Conclusion
The FQP10N60 N-Channel MOSFET offers a balanced combination of high-voltage capability, efficient switching, and reliable thermal performance. Its electrical characteristics and TO-220 package make it a solid choice for SMPS, inverters, and industrial power applications.
Datasheet of FQP10N60 MOSFET
Click the following Button below to download the datasheet of FQP10N60 :
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